In this paper, we report the characteristics of carbon nanotubes grown on a novel Fe-Si thin film catalysts at a substrate temperature of 370 °C. The catalyst thin films were prepared using a sputter deposition method. The growth of carbon nanotubes was performed in a microwave plasma chemical vapor deposition (MPCVD) reactor under various methane to hydrogen ratios and different growth times. We have shown that the CNTs grown at a temperature as low as 370 °C and a very high growth rate of 13 μm/min exhibit microstructures as good as those obtained at higher temperatures and lower growth rates. We have also provided evidences to support the assumption and augment made in a previously reported growth mechanism.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering