Characteristics of an InP-InGaAs-InGaAsP HBT

Jing Yuh Chen; Shiou Ying Cheng; Chun Yuan Chen; Kuan Ming Lee; Chih Hung Yen; Ssu Yi Fu; Sheng Fu Tsai; Wen Chau Liu

doi:10.1109/TED.2004.836549

Characteristics of an InP-InGaAs-InGaAsP HBT

Jing Yuh Chen, Shiou Ying Cheng, Chun Yuan Chen, Kuan Ming Lee, Chih Hung Yen, Ssu Yi Fu, Sheng Fu Tsai, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The dc characteristics of an interesting heterojunction bipolar transistor with an InGaAs-InGaAsP composite-collector structure are studied and reported. Due to the insertion of an InGaAsP setback layer at the base-emitter heterojunction, the potential spikes as well as the electron blocking effect are suppressed significantly. In addition, the presence of an effective base-collector homojunction substantially reduces the current blocking effect. The studied device shows good dc performances including the small offset and saturation voltage without degrading the breakdown behavior. The typical dc current gain of 118 and the desired current amplification over 11 decades of the magnitude of collector current I_c are obtained.

Original language	English
Pages (from-to)	1935-1938
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	51
Issue number	11
DOIs	https://doi.org/10.1109/TED.2004.836549
Publication status	Published - 2004 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2004.836549

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title = "Characteristics of an InP-InGaAs-InGaAsP HBT",

abstract = "The dc characteristics of an interesting heterojunction bipolar transistor with an InGaAs-InGaAsP composite-collector structure are studied and reported. Due to the insertion of an InGaAsP setback layer at the base-emitter heterojunction, the potential spikes as well as the electron blocking effect are suppressed significantly. In addition, the presence of an effective base-collector homojunction substantially reduces the current blocking effect. The studied device shows good dc performances including the small offset and saturation voltage without degrading the breakdown behavior. The typical dc current gain of 118 and the desired current amplification over 11 decades of the magnitude of collector current Ic are obtained.",

author = "Chen, {Jing Yuh} and Cheng, {Shiou Ying} and Chen, {Chun Yuan} and Lee, {Kuan Ming} and Yen, {Chih Hung} and Fu, {Ssu Yi} and Tsai, {Sheng Fu} and Liu, {Wen Chau}",

year = "2004",

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TY - JOUR

T1 - Characteristics of an InP-InGaAs-InGaAsP HBT

AU - Chen, Jing Yuh

AU - Cheng, Shiou Ying

AU - Chen, Chun Yuan

AU - Lee, Kuan Ming

AU - Yen, Chih Hung

AU - Fu, Ssu Yi

AU - Tsai, Sheng Fu

AU - Liu, Wen Chau

PY - 2004/11

Y1 - 2004/11

N2 - The dc characteristics of an interesting heterojunction bipolar transistor with an InGaAs-InGaAsP composite-collector structure are studied and reported. Due to the insertion of an InGaAsP setback layer at the base-emitter heterojunction, the potential spikes as well as the electron blocking effect are suppressed significantly. In addition, the presence of an effective base-collector homojunction substantially reduces the current blocking effect. The studied device shows good dc performances including the small offset and saturation voltage without degrading the breakdown behavior. The typical dc current gain of 118 and the desired current amplification over 11 decades of the magnitude of collector current Ic are obtained.

AB - The dc characteristics of an interesting heterojunction bipolar transistor with an InGaAs-InGaAsP composite-collector structure are studied and reported. Due to the insertion of an InGaAsP setback layer at the base-emitter heterojunction, the potential spikes as well as the electron blocking effect are suppressed significantly. In addition, the presence of an effective base-collector homojunction substantially reduces the current blocking effect. The studied device shows good dc performances including the small offset and saturation voltage without degrading the breakdown behavior. The typical dc current gain of 118 and the desired current amplification over 11 decades of the magnitude of collector current Ic are obtained.

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SP - 1935

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

Characteristics of an InP-InGaAs-InGaAsP HBT

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