The dc characteristics of an interesting heterojunction bipolar transistor with an InGaAs-InGaAsP composite-collector structure are studied and reported. Due to the insertion of an InGaAsP setback layer at the base-emitter heterojunction, the potential spikes as well as the electron blocking effect are suppressed significantly. In addition, the presence of an effective base-collector homojunction substantially reduces the current blocking effect. The studied device shows good dc performances including the small offset and saturation voltage without degrading the breakdown behavior. The typical dc current gain of 118 and the desired current amplification over 11 decades of the magnitude of collector current Ic are obtained.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering