Characteristics of an InP/InGaAs double heterojunction bipolar transistor with an InAlGaAs/InP composite collector structure

Tzu Pin Chen; Shiou Ying Cheng; Wei Hsin Chen; Ching Wen Hung; Kuei Yi Chu; Li Yang Chen; Tsung Han Tsai; Wen Chau Liu

doi:10.1149/1.2815445

Characteristics of an InP/InGaAs double heterojunction bipolar transistor with an InAlGaAs/InP composite collector structure

Tzu Pin Chen, Shiou Ying Cheng, Wei Hsin Chen, Ching Wen Hung, Kuei Yi Chu, Li Yang Chen, Tsung Han Tsai, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

Abstract

The characteristics of an interesting InPInGaAs double heterojunction bipolar transistor (DHBT) with an InAlGaAsInP composite collector structure were demonstrated and studied. Experimentally, the operation regime was wider than 11 decades in magnitude of collector current density (10-6 - 105 A cm2). As compared to previous reports, the studied device exhibited a relatively larger Early voltage, smaller base-collector reverse saturation current, ICBO, smaller multiplication factor, M-1, and smaller electron impact ionization, α. Moreover, the device studied also showed a relatively weaker temperature dependence on the electron impact ionization, α. Consequently, the DHBT device offers promise for low-voltage and low-power circuit applications.

Original language	English
Pages (from-to)	H136-H139
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	2
DOIs	https://doi.org/10.1149/1.2815445
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "Characteristics of an InP/InGaAs double heterojunction bipolar transistor with an InAlGaAs/InP composite collector structure",

abstract = "The characteristics of an interesting InPInGaAs double heterojunction bipolar transistor (DHBT) with an InAlGaAsInP composite collector structure were demonstrated and studied. Experimentally, the operation regime was wider than 11 decades in magnitude of collector current density (10-6 - 105 A cm2). As compared to previous reports, the studied device exhibited a relatively larger Early voltage, smaller base-collector reverse saturation current, ICBO, smaller multiplication factor, M-1, and smaller electron impact ionization, α. Moreover, the device studied also showed a relatively weaker temperature dependence on the electron impact ionization, α. Consequently, the DHBT device offers promise for low-voltage and low-power circuit applications.",

author = "Chen, {Tzu Pin} and Cheng, {Shiou Ying} and Chen, {Wei Hsin} and Hung, {Ching Wen} and Chu, {Kuei Yi} and Chen, {Li Yang} and Tsai, {Tsung Han} and Liu, {Wen Chau}",

year = "2008",

doi = "10.1149/1.2815445",

language = "English",

volume = "155",

pages = "H136--H139",

journal = "Journal of the Electrochemical Society",

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publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - Characteristics of an InP/InGaAs double heterojunction bipolar transistor with an InAlGaAs/InP composite collector structure

AU - Chen, Tzu Pin

AU - Cheng, Shiou Ying

AU - Chen, Wei Hsin

AU - Hung, Ching Wen

AU - Chu, Kuei Yi

AU - Chen, Li Yang

AU - Tsai, Tsung Han

AU - Liu, Wen Chau

PY - 2008

Y1 - 2008

N2 - The characteristics of an interesting InPInGaAs double heterojunction bipolar transistor (DHBT) with an InAlGaAsInP composite collector structure were demonstrated and studied. Experimentally, the operation regime was wider than 11 decades in magnitude of collector current density (10-6 - 105 A cm2). As compared to previous reports, the studied device exhibited a relatively larger Early voltage, smaller base-collector reverse saturation current, ICBO, smaller multiplication factor, M-1, and smaller electron impact ionization, α. Moreover, the device studied also showed a relatively weaker temperature dependence on the electron impact ionization, α. Consequently, the DHBT device offers promise for low-voltage and low-power circuit applications.

AB - The characteristics of an interesting InPInGaAs double heterojunction bipolar transistor (DHBT) with an InAlGaAsInP composite collector structure were demonstrated and studied. Experimentally, the operation regime was wider than 11 decades in magnitude of collector current density (10-6 - 105 A cm2). As compared to previous reports, the studied device exhibited a relatively larger Early voltage, smaller base-collector reverse saturation current, ICBO, smaller multiplication factor, M-1, and smaller electron impact ionization, α. Moreover, the device studied also showed a relatively weaker temperature dependence on the electron impact ionization, α. Consequently, the DHBT device offers promise for low-voltage and low-power circuit applications.

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JF - Journal of the Electrochemical Society

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ER -

Characteristics of an InP/InGaAs double heterojunction bipolar transistor with an InAlGaAs/InP composite collector structure

Abstract

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