Characteristics of an InP/InGaAs double heterojunction bipolar transistor with an InAlGaAs/InP composite collector structure

Tzu Pin Chen, Shiou Ying Cheng, Wei-Hsin Chen, Ching Wen Hung, Kuei Yi Chu, Li Yang Chen, Tsung Han Tsai, Wen-Chau Liu

Research output: Contribution to journalArticle


The characteristics of an interesting InPInGaAs double heterojunction bipolar transistor (DHBT) with an InAlGaAsInP composite collector structure were demonstrated and studied. Experimentally, the operation regime was wider than 11 decades in magnitude of collector current density (10-6 - 105 A cm2). As compared to previous reports, the studied device exhibited a relatively larger Early voltage, smaller base-collector reverse saturation current, ICBO, smaller multiplication factor, M-1, and smaller electron impact ionization, α. Moreover, the device studied also showed a relatively weaker temperature dependence on the electron impact ionization, α. Consequently, the DHBT device offers promise for low-voltage and low-power circuit applications.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number2
Publication statusPublished - 2008 Jan 4


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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