Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Chun Yuan Chen; Chii Maw Uang; Shiou Ying Cheng; Hung Ming Chuang; Ssu I. Fu; Ching Hsiu Tsai; Chi Yuan Chang; Wen Chau Liu

Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Chun Yuan Chen, Chii Maw Uang, Shiou Ying Cheng, Hung Ming Chuang, Ssu I. Fu, Ching Hsiu Tsai, Chi Yuan Chang, Wen Chau Liu

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10^-12 to 10^-1 A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 ^-12A (1.56×10^-7A/cm²). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

Original language	English
Title of host publication	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Editors	X.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	220-223
Number of pages	4
Volume	4
ISBN (Print)	7309039157
Publication status	Published - 2004
Event	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China Duration: 2004 Mar 15 → 2004 Mar 16

Other

Other	Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
Country/Territory	China
City	Shanghai
Period	04-03-15 → 04-03-16

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

Chen, C. Y., Uang, C. M., Cheng, S. Y., Chuang, H. M., Fu, S. I., Tsai, C. H., Chang, C. Y., & Liu, W. C. (2004). Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT). In X. P. Qu, G. P. Ru, B. Z. Li, B. Mizuno, & H. Iwai (Eds.), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 (Vol. 4, pp. 220-223). Institute of Electrical and Electronics Engineers Inc..

Chen, Chun Yuan ; Uang, Chii Maw ; Cheng, Shiou Ying et al. / Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT). Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. editor / X.P. Qu ; G.P. Ru ; B.Z. Li ; B. Mizuno ; H. Iwai. Vol. 4 Institute of Electrical and Electronics Engineers Inc., 2004. pp. 220-223

@inproceedings{1483adf44a1446b2935d46b3f75807d8,

title = "Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)",

abstract = "The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1 A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12A (1.56×10-7A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.",

author = "Chen, {Chun Yuan} and Uang, {Chii Maw} and Cheng, {Shiou Ying} and Chuang, {Hung Ming} and Fu, {Ssu I.} and Tsai, {Ching Hsiu} and Chang, {Chi Yuan} and Liu, {Wen Chau}",

year = "2004",

language = "English",

isbn = "7309039157",

volume = "4",

pages = "220--223",

editor = "X.P. Qu and G.P. Ru and B.Z. Li and B. Mizuno and H. Iwai",

booktitle = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 ; Conference date: 15-03-2004 Through 16-03-2004",

}

Chen, CY, Uang, CM, Cheng, SY, Chuang, HM, Fu, SI, Tsai, CH, Chang, CY & Liu, WC 2004, Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT). in XP Qu, GP Ru, BZ Li, B Mizuno & H Iwai (eds), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. vol. 4, Institute of Electrical and Electronics Engineers Inc., pp. 220-223, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004, Shanghai, China, 04-03-15.

Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT). / Chen, Chun Yuan; Uang, Chii Maw; Cheng, Shiou Ying et al.
Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. ed. / X.P. Qu; G.P. Ru; B.Z. Li; B. Mizuno; H. Iwai. Vol. 4 Institute of Electrical and Electronics Engineers Inc., 2004. p. 220-223.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

AU - Chen, Chun Yuan

AU - Uang, Chii Maw

AU - Cheng, Shiou Ying

AU - Chuang, Hung Ming

AU - Fu, Ssu I.

AU - Tsai, Ching Hsiu

AU - Chang, Chi Yuan

AU - Liu, Wen Chau

PY - 2004

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N2 - The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1 A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12A (1.56×10-7A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

AB - The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1 A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12A (1.56×10-7A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

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BT - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

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A2 - Ru, G.P.

A2 - Li, B.Z.

A2 - Mizuno, B.

A2 - Iwai, H.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Y2 - 15 March 2004 through 16 March 2004

ER -

Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

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