Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Chun Yuan Chen, Chii Maw Uang, Shiou Ying Cheng, Hung Ming Chuang, Ssu I. Fu, Ching Hsiu Tsai, Chi Yuan Chang, Wen Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10-12 to 10-1 A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9×10 -12A (1.56×10-7A/cm2). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.

Original languageEnglish
Title of host publicationExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
EditorsX.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages220-223
Number of pages4
Volume4
ISBN (Print)7309039157
Publication statusPublished - 2004 Aug 16
EventExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China
Duration: 2004 Mar 152004 Mar 16

Other

OtherExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
CountryChina
CityShanghai
Period04-03-1504-03-16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)'. Together they form a unique fingerprint.

Cite this