Characteristics of atomic layer deposition–grown zinc oxide thin film with and without aluminum

Ming Chun Tseng, Dong Sing Wuu, Chi Lu Chen, Hsin Ying Lee, Cheng Yu Chien, Po Liang Liu, Ray Hua Horng

Research output: Contribution to journalArticle

Abstract

Zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films were deposited on glass substrates using atomic layer deposition. The Al composition of the AZO thin films was varied by controlling the Zn:Al cycle ratios. The ZnO and AZO thin films were characterized using atomic force microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and optical measurements. The electrical properties of the ZnO and AZO thin films were influenced by the Zn:Al cycle ratios. The resistivity of the AZO thin film decreased significantly, whereas the carrier concentration increased with the Al composition. As the Zn:Al cycle ratio increased, the AZO thin film achieved an average transmittance of >85%.

Original languageEnglish
Pages (from-to)535-543
Number of pages9
JournalApplied Surface Science
Volume491
DOIs
Publication statusPublished - 2019 Oct 15

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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