Characteristics of functional heterostructure-emitter bipolar transistors (HEBTs)

Engineering & Materials Science

• Heterojunctions 73%
• Bipolar transistors 69%
• Logic circuits 12%
• Analog circuits 12%
• Electrons 11%
• Transistors 9%
• Electric potential 5%

Physics & Astronomy

• bipolar transistors 60%
• emitters 46%
• aluminum gallium arsenides 19%
• spike potentials 8%
• analog circuits 7%
• logic circuits 6%
• multiplication 5%
• low voltage 5%
• avalanches 4%
• high current 4%
• performance 4%
• transistors 4%
• electrons 2%

Chemical Compounds

• Current Gain 100%
• Voltage 40%
• Electron Particle 30%