Characteristics of GaAs-based long-wavelength, highly strained InGaAs quantum well vertical-cavity laser

I. Liang Chen, Wei Chou Hsu, Chen Ming Lu, Chih Hung Chiou, Zheng Hong Lee, Tsin Dong Lee

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Continuous-wave (CW) operation of highly strained double quantum well InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs) emitting at 1252nm at room temperature have been realized by metal organic chemical vapor deposition (MOCVD). Our preliminary results reveal the relation between the output performance and gain-cavity detuning of the long wavelength InGaAs VCSELs. Compared with the quaternary GaInNAs VCSEL, it is found that the InGaAs VCSEL manifests better temperature stability.

Original languageEnglish
Pages (from-to)L725-L727
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number6 A
DOIs
Publication statusPublished - 2004 Jun 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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