Characteristics of GaAs-based long-wavelength, highly strained InGaAs quantum well vertical-cavity laser

I. Liang Chen; Wei Chou Hsu; Chen Ming Lu; Chih Hung Chiou; Zheng Hong Lee; Tsin Dong Lee

doi:10.1143/jjap.43.l725

Characteristics of GaAs-based long-wavelength, highly strained InGaAs quantum well vertical-cavity laser

I. Liang Chen, Wei Chou Hsu, Chen Ming Lu, Chih Hung Chiou, Zheng Hong Lee, Tsin Dong Lee

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Continuous-wave (CW) operation of highly strained double quantum well InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs) emitting at 1252nm at room temperature have been realized by metal organic chemical vapor deposition (MOCVD). Our preliminary results reveal the relation between the output performance and gain-cavity detuning of the long wavelength InGaAs VCSELs. Compared with the quaternary GaInNAs VCSEL, it is found that the InGaAs VCSEL manifests better temperature stability.

Original language	English
Pages (from-to)	L725-L727
Journal	Japanese Journal of Applied Physics
Volume	43
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.43.l725
Publication status	Published - 2004 Jun 1

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "Characteristics of GaAs-based long-wavelength, highly strained InGaAs quantum well vertical-cavity laser",

abstract = "Continuous-wave (CW) operation of highly strained double quantum well InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs) emitting at 1252nm at room temperature have been realized by metal organic chemical vapor deposition (MOCVD). Our preliminary results reveal the relation between the output performance and gain-cavity detuning of the long wavelength InGaAs VCSELs. Compared with the quaternary GaInNAs VCSEL, it is found that the InGaAs VCSEL manifests better temperature stability.",

author = "Chen, {I. Liang} and Hsu, {Wei Chou} and Lu, {Chen Ming} and Chiou, {Chih Hung} and Lee, {Zheng Hong} and Lee, {Tsin Dong}",

year = "2004",

month = jun,

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doi = "10.1143/jjap.43.l725",

language = "English",

volume = "43",

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journal = "Japanese Journal of Applied Physics",

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T1 - Characteristics of GaAs-based long-wavelength, highly strained InGaAs quantum well vertical-cavity laser

AU - Chen, I. Liang

AU - Hsu, Wei Chou

AU - Lu, Chen Ming

AU - Chiou, Chih Hung

AU - Lee, Zheng Hong

AU - Lee, Tsin Dong

PY - 2004/6/1

Y1 - 2004/6/1

N2 - Continuous-wave (CW) operation of highly strained double quantum well InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs) emitting at 1252nm at room temperature have been realized by metal organic chemical vapor deposition (MOCVD). Our preliminary results reveal the relation between the output performance and gain-cavity detuning of the long wavelength InGaAs VCSELs. Compared with the quaternary GaInNAs VCSEL, it is found that the InGaAs VCSEL manifests better temperature stability.

AB - Continuous-wave (CW) operation of highly strained double quantum well InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs) emitting at 1252nm at room temperature have been realized by metal organic chemical vapor deposition (MOCVD). Our preliminary results reveal the relation between the output performance and gain-cavity detuning of the long wavelength InGaAs VCSELs. Compared with the quaternary GaInNAs VCSEL, it is found that the InGaAs VCSEL manifests better temperature stability.

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DO - 10.1143/jjap.43.l725

M3 - Article

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SN - 0021-4922

VL - 43

SP - L725-L727

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6 A

ER -

Characteristics of GaAs-based long-wavelength, highly strained InGaAs quantum well vertical-cavity laser

Abstract

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