TY - JOUR
T1 - Characteristics of GaAs graded-period delta-doped superlattice
AU - Liu, Wen Chau
AU - Sun, Chung Yih
AU - Lour, Wen Shiung
PY - 1991/1/1
Y1 - 1991/1/1
N2 - In the paper, the characteristics of a GaAs graded-period delta-doped superlattice grown by molecular beam epitaxy are studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurs both at 300 K and 77 K. An N-shaped NDC due to the temperature-induced tunnelling effect is observed at 300 K. In addition, a two-state avalanche multiplication process, i.e. a middle quasistable region, is seen at 77 K. Finally, there is an interesting hysteresis phenomenon owing to the trapped holes created by the avalanche multiplications.
AB - In the paper, the characteristics of a GaAs graded-period delta-doped superlattice grown by molecular beam epitaxy are studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurs both at 300 K and 77 K. An N-shaped NDC due to the temperature-induced tunnelling effect is observed at 300 K. In addition, a two-state avalanche multiplication process, i.e. a middle quasistable region, is seen at 77 K. Finally, there is an interesting hysteresis phenomenon owing to the trapped holes created by the avalanche multiplications.
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U2 - 10.1049/ip-g-2.1991.0104
DO - 10.1049/ip-g-2.1991.0104
M3 - Article
AN - SCOPUS:0026383918
SN - 0956-3768
VL - 138
SP - 629
EP - 632
JO - IEE Proceedings, Part G: Circuits, Devices and Systems
JF - IEE Proceedings, Part G: Circuits, Devices and Systems
IS - 6
ER -