Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor

Kuo Hui Yu, Wen Lung Chang, Shun Ching Feng, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review


The characteristics of GaAs/InGaP/GaAs camel-gate field-effect transistor (CAMFET) with various channel structures including the single-, double-, and triple-step doped channel are studied. A theoretical model is used to analyze the device performances with different structures. Experimentally, a triple-step doped channel GaAs/InGaP/GaAs CAMFET has been fabricated successfully and demonstrated. From the theoretical analysis and experimental results, the gate turn-on and breakdown voltages could be enhanced by using the large band gap InGaP layer and triple-step doped channel structure. Furthermore, the good transistor characteristics are observed. Hence the studied device shows a good potential for the practice circuit applications.

Original languageEnglish
Pages (from-to)2069-2075
Number of pages7
JournalSolid-State Electronics
Issue number11
Publication statusPublished - 2000 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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