Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor

Kuo Hui Yu; Wen Lung Chang; Shun Ching Feng; Wen Chau Liu

doi:10.1016/S0038-1101(00)00172-6

Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor

Kuo Hui Yu, Wen Lung Chang, Shun Ching Feng, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

The characteristics of GaAs/InGaP/GaAs camel-gate field-effect transistor (CAMFET) with various channel structures including the single-, double-, and triple-step doped channel are studied. A theoretical model is used to analyze the device performances with different structures. Experimentally, a triple-step doped channel GaAs/InGaP/GaAs CAMFET has been fabricated successfully and demonstrated. From the theoretical analysis and experimental results, the gate turn-on and breakdown voltages could be enhanced by using the large band gap InGaP layer and triple-step doped channel structure. Furthermore, the good transistor characteristics are observed. Hence the studied device shows a good potential for the practice circuit applications.

Original language	English
Pages (from-to)	2069-2075
Number of pages	7
Journal	Solid-State Electronics
Volume	44
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1101(00)00172-6
Publication status	Published - 2000 Nov 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(00)00172-6

Cite this

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title = "Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor",

abstract = "The characteristics of GaAs/InGaP/GaAs camel-gate field-effect transistor (CAMFET) with various channel structures including the single-, double-, and triple-step doped channel are studied. A theoretical model is used to analyze the device performances with different structures. Experimentally, a triple-step doped channel GaAs/InGaP/GaAs CAMFET has been fabricated successfully and demonstrated. From the theoretical analysis and experimental results, the gate turn-on and breakdown voltages could be enhanced by using the large band gap InGaP layer and triple-step doped channel structure. Furthermore, the good transistor characteristics are observed. Hence the studied device shows a good potential for the practice circuit applications.",

author = "Yu, {Kuo Hui} and Chang, {Wen Lung} and Feng, {Shun Ching} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under contract no. NSC 88-2215-E-006-010. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "2000",

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doi = "10.1016/S0038-1101(00)00172-6",

language = "English",

volume = "44",

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T1 - Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor

AU - Yu, Kuo Hui

AU - Chang, Wen Lung

AU - Feng, Shun Ching

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under contract no. NSC 88-2215-E-006-010. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2000/11/1

Y1 - 2000/11/1

N2 - The characteristics of GaAs/InGaP/GaAs camel-gate field-effect transistor (CAMFET) with various channel structures including the single-, double-, and triple-step doped channel are studied. A theoretical model is used to analyze the device performances with different structures. Experimentally, a triple-step doped channel GaAs/InGaP/GaAs CAMFET has been fabricated successfully and demonstrated. From the theoretical analysis and experimental results, the gate turn-on and breakdown voltages could be enhanced by using the large band gap InGaP layer and triple-step doped channel structure. Furthermore, the good transistor characteristics are observed. Hence the studied device shows a good potential for the practice circuit applications.

AB - The characteristics of GaAs/InGaP/GaAs camel-gate field-effect transistor (CAMFET) with various channel structures including the single-, double-, and triple-step doped channel are studied. A theoretical model is used to analyze the device performances with different structures. Experimentally, a triple-step doped channel GaAs/InGaP/GaAs CAMFET has been fabricated successfully and demonstrated. From the theoretical analysis and experimental results, the gate turn-on and breakdown voltages could be enhanced by using the large band gap InGaP layer and triple-step doped channel structure. Furthermore, the good transistor characteristics are observed. Hence the studied device shows a good potential for the practice circuit applications.

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JO - Solid-State Electronics

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IS - 11

ER -

Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor

Abstract

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