Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

Jer Chyi Wang, Chao Sung Lai, Yu Kai Chen, Chih Ting Lin, Chuan Pu Liu, Michael R.S. Huang, Yu Ching Fang

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

Gadolinium oxide nanocrystal (Gd2 O3-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd2 O3-NC dot surrounded by amorphous Gd2 O3 dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd2 O3-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 1011 cm-2. In addition, the formation of Gd2 O3 -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 104 program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd2 O3 nanocrystal memory.

Original languageEnglish
Pages (from-to)H202-H204
JournalElectrochemical and Solid-State Letters
Volume12
Issue number6
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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