Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

Jer Chyi Wang; Chao Sung Lai; Yu Kai Chen; Chih Ting Lin; Chuan Pu Liu; Michael R.S. Huang; Yu Ching Fang

doi:10.1149/1.3109573

Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

Jer Chyi Wang, Chao Sung Lai, Yu Kai Chen, Chih Ting Lin, Chuan Pu Liu, Michael R.S. Huang, Yu Ching Fang

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Gadolinium oxide nanocrystal (Gd₂ O₃-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd₂ O₃-NC dot surrounded by amorphous Gd₂ O₃ dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd₂ O₃-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 10¹¹ cm^-2. In addition, the formation of Gd₂ O₃ -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 10⁴ program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd₂ O₃ nanocrystal memory.

Original language	English
Pages (from-to)	H202-H204
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	6
DOIs	https://doi.org/10.1149/1.3109573
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing",

abstract = "Gadolinium oxide nanocrystal (Gd2 O3-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd2 O3-NC dot surrounded by amorphous Gd2 O3 dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd2 O3-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 1011 cm-2. In addition, the formation of Gd2 O3 -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 104 program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd2 O3 nanocrystal memory.",

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T1 - Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

AU - Wang, Jer Chyi

AU - Lai, Chao Sung

AU - Chen, Yu Kai

AU - Lin, Chih Ting

AU - Liu, Chuan Pu

AU - Huang, Michael R.S.

AU - Fang, Yu Ching

PY - 2009

Y1 - 2009

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AB - Gadolinium oxide nanocrystal (Gd2 O3-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd2 O3-NC dot surrounded by amorphous Gd2 O3 dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd2 O3-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 1011 cm-2. In addition, the formation of Gd2 O3 -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 104 program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd2 O3 nanocrystal memory.

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Characteristics of gadolinium oxide nanocrystal memory with optimized rapid thermal annealing

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