Gadolinium oxide nanocrystal (Gd2 O3-NC) memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd2 O3-NC dot surrounded by amorphous Gd2 O3 dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd2 O3-NC memory exhibits a hysteresis memory window of 4 V and NC dot density of more than 8.5× 1011 cm-2. In addition, the formation of Gd2 O3 -NC and charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 104 program and erase cycling for a sufficient memory window (>2 V) was also observed for the Gd2 O3 nanocrystal memory.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2009|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering