Characteristics of GaN-Based LEDs with Hybrid Microhole Arrays and SiO2 Microspheres/Nanoparticles Structures

Jian Kai Liou, Yi Chun Chan, Wei Cheng Chen, Ching Hong Chang, Chun Yen Chen, Jung Hui Tsai, Wen Chau Liu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The Characteristics of GaN-based LEDs with hybrid microhole arrays and SiO2 microspheres (MSs)/ nanoparticles (NPs) are comprehensively studied. The SiO2 MSs/NPs antireflection coating, deposited by a rapid convection deposition, acts as a passivation layer of GaN-based LEDs. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of SiO2 MSs/NPs antireflection coating, the scattering effect could also be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED with a planar aluminum-doped zinc oxide current spreading layer (Device A), the studied device with the proposed hybrid structure and a sputtered SiO2 passivation layer (Device E) causes a suppressed leakage current and % enhancements on light output power, external quantum efficiency, and wall-plug efficiency performance.

Original languageEnglish
Article number7932114
Pages (from-to)2854-2858
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - 2017 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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