Characteristics of GaN-Based LEDs with Hybrid Microhole Arrays and SiO2 Microspheres/Nanoparticles Structures

Jian Kai Liou, Yi Chun Chan, Wei Cheng Chen, Ching Hong Chang, Chun Yen Chen, Jung Hui Tsai, Wen-Chau Liu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The Characteristics of GaN-based LEDs with hybrid microhole arrays and SiO2 microspheres (MSs)/ nanoparticles (NPs) are comprehensively studied. The SiO2 MSs/NPs antireflection coating, deposited by a rapid convection deposition, acts as a passivation layer of GaN-based LEDs. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of SiO2 MSs/NPs antireflection coating, the scattering effect could also be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED with a planar aluminum-doped zinc oxide current spreading layer (Device A), the studied device with the proposed hybrid structure and a sputtered SiO2 passivation layer (Device E) causes a suppressed leakage current and % enhancements on light output power, external quantum efficiency, and wall-plug efficiency performance.

Original languageEnglish
Article number7932114
Pages (from-to)2854-2858
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume64
Issue number7
DOIs
Publication statusPublished - 2017 Jul 1

Fingerprint

Antireflection coatings
Microspheres
Light emitting diodes
Nanoparticles
Passivation
Zinc Oxide
Zinc oxide
Aluminum
Quantum efficiency
Leakage currents
Scattering

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Liou, Jian Kai ; Chan, Yi Chun ; Chen, Wei Cheng ; Chang, Ching Hong ; Chen, Chun Yen ; Tsai, Jung Hui ; Liu, Wen-Chau. / Characteristics of GaN-Based LEDs with Hybrid Microhole Arrays and SiO2 Microspheres/Nanoparticles Structures. In: IEEE Transactions on Electron Devices. 2017 ; Vol. 64, No. 7. pp. 2854-2858.
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abstract = "The Characteristics of GaN-based LEDs with hybrid microhole arrays and SiO2 microspheres (MSs)/ nanoparticles (NPs) are comprehensively studied. The SiO2 MSs/NPs antireflection coating, deposited by a rapid convection deposition, acts as a passivation layer of GaN-based LEDs. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of SiO2 MSs/NPs antireflection coating, the scattering effect could also be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED with a planar aluminum-doped zinc oxide current spreading layer (Device A), the studied device with the proposed hybrid structure and a sputtered SiO2 passivation layer (Device E) causes a suppressed leakage current and {\%} enhancements on light output power, external quantum efficiency, and wall-plug efficiency performance.",
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Characteristics of GaN-Based LEDs with Hybrid Microhole Arrays and SiO2 Microspheres/Nanoparticles Structures. / Liou, Jian Kai; Chan, Yi Chun; Chen, Wei Cheng; Chang, Ching Hong; Chen, Chun Yen; Tsai, Jung Hui; Liu, Wen-Chau.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 7, 7932114, 01.07.2017, p. 2854-2858.

Research output: Contribution to journalArticle

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AU - Liou, Jian Kai

AU - Chan, Yi Chun

AU - Chen, Wei Cheng

AU - Chang, Ching Hong

AU - Chen, Chun Yen

AU - Tsai, Jung Hui

AU - Liu, Wen-Chau

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AB - The Characteristics of GaN-based LEDs with hybrid microhole arrays and SiO2 microspheres (MSs)/ nanoparticles (NPs) are comprehensively studied. The SiO2 MSs/NPs antireflection coating, deposited by a rapid convection deposition, acts as a passivation layer of GaN-based LEDs. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of SiO2 MSs/NPs antireflection coating, the scattering effect could also be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED with a planar aluminum-doped zinc oxide current spreading layer (Device A), the studied device with the proposed hybrid structure and a sputtered SiO2 passivation layer (Device E) causes a suppressed leakage current and % enhancements on light output power, external quantum efficiency, and wall-plug efficiency performance.

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