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Characteristics of GaN/InGaN double-heterostructure photovoltaic cells
Ming Hsien Wu
, Sheng Po Chang
,
Shoou Jinn Chang
, Ray Hua Horng
, Wen Yih Liao
, Ray Ming Lin
Center for Micro/Nano Science and Technology
Institute of Microelectronics
Research output
:
Contribution to journal
›
Article
›
peer-review
5
Citations (Scopus)
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Keyphrases
AM1.5G
9%
Conversion Efficiency
18%
Double Heterostructure
100%
Epilayer
9%
Fill Factor
9%
High Open-circuit Voltage
9%
Indium Gallium Nitride (InGaN)
100%
Intrinsic Layer
9%
Measurement Condition
9%
P-GaN
9%
Photoelectric Conversion
9%
Photovoltaic Cells
100%
Photovoltaic Properties
18%
V-factor
9%
Engineering
Conversion Efficiency
25%
Experimental Measurement
12%
Fill Factor
12%
Intrinsic Layer
12%
Measurement Condition
12%
Open Circuit Voltage
12%
Photovoltaic Effect
25%
Simulated Result
12%
Solar Cell
100%
Material Science
Epilayers
12%
Photovoltaics
25%