Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration

Chih Ciao Yang, C. H. Jang, Jinn Kong Sheu, Ming Lun Lee, Shang Ju Tu, Feng Wen Huang, Yu Hsiang Yeh, Wei Chih Lai

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


InGaN/sapphire-based photovoltaic (PV) cells with blue-band GaN/InGaN multiple-quantum-well absorption layers grown on patterned sapphire substrates were characterized under high concentrations up to 150-sun AM1.5G testing conditions. When the concentration ratio increased from 1 to 150 suns, the open-circuit voltage of the PV cells increased from 2.28 to 2.50 V. The peak power conversion efficiency (PCE) occurred at the 100-sun conditions, where the PV cells maintained the fill factor as high as 0.70 and exhibited a PCE of 2.23%. The results showed great potential of InGaN alloys for future high concentration photovoltaic applications.

Original languageEnglish
Pages (from-to)A695-A700
JournalOptics Express
Issue number104
Publication statusPublished - 2011 Jul 4

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics


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