Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration

Chih Ciao Yang, C. H. Jang, Jinn-Kong Sheu, Ming Lun Lee, Shang Ju Tu, Feng Wen Huang, Yu Hsiang Yeh, Wei-Chi Lai

Research output: Contribution to journalArticle

16 Citations (Scopus)


InGaN/sapphire-based photovoltaic (PV) cells with blue-band GaN/InGaN multiple-quantum-well absorption layers grown on patterned sapphire substrates were characterized under high concentrations up to 150-sun AM1.5G testing conditions. When the concentration ratio increased from 1 to 150 suns, the open-circuit voltage of the PV cells increased from 2.28 to 2.50 V. The peak power conversion efficiency (PCE) occurred at the 100-sun conditions, where the PV cells maintained the fill factor as high as 0.70 and exhibited a PCE of 2.23%. The results showed great potential of InGaN alloys for future high concentration photovoltaic applications.

Original languageEnglish
Pages (from-to)A695-A700
JournalOptics Express
Issue number104
Publication statusPublished - 2011 Jul 4

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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