Abstract
InGaN/sapphire-based photovoltaic (PV) cells with blue-band GaN/InGaN multiple-quantum-well absorption layers grown on patterned sapphire substrates were characterized under high concentrations up to 150-sun AM1.5G testing conditions. When the concentration ratio increased from 1 to 150 suns, the open-circuit voltage of the PV cells increased from 2.28 to 2.50 V. The peak power conversion efficiency (PCE) occurred at the 100-sun conditions, where the PV cells maintained the fill factor as high as 0.70 and exhibited a PCE of 2.23%. The results showed great potential of InGaN alloys for future high concentration photovoltaic applications.
Original language | English |
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Pages (from-to) | A695-A700 |
Journal | Optics Express |
Volume | 19 |
Issue number | 104 |
DOIs | |
Publication status | Published - 2011 Jul 4 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics