Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights

Sheng Fu Yu; Sheng Po Chang; Shoou Jinn Chang; Ray Ming Lin; Hsin Hung Wu; Wen Ching Hsu

doi:10.1155/2012/346915

Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights

Sheng Fu Yu, Sheng Po Chang, Shoou Jinn Chang, Ray Ming Lin, Hsin Hung Wu, Wen Ching Hsu

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8 Citations (Scopus)

Abstract

The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%)μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

Original language	English
Article number	346915
Journal	Journal of Nanomaterials
Volume	2012
DOIs	https://doi.org/10.1155/2012/346915
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Materials Science(all)

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title = "Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights",

abstract = "The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%)μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.",

author = "Yu, {Sheng Fu} and Chang, {Sheng Po} and Chang, {Shoou Jinn} and Lin, {Ray Ming} and Wu, {Hsin Hung} and Hsu, {Wen Ching}",

year = "2012",

doi = "10.1155/2012/346915",

language = "English",

volume = "2012",

journal = "Journal of Nanomaterials",

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T1 - Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights

AU - Yu, Sheng Fu

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Lin, Ray Ming

AU - Wu, Hsin Hung

AU - Hsu, Wen Ching

PY - 2012

Y1 - 2012

N2 - The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%)μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

AB - The optical and electrical characteristics of InGaN-based blue light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different pattern heights and on planar sapphire by atmospheric-pressure metal-organic chemical vapor deposition were investigated. Compared with planar sapphire, it was found that the LED electroluminescence intensity is significantly enhanced on PSSs with pattern heights of 0.5 (21%), 1.1 (57%), 1.5 (81%), and 1.9 (91%)μm at an injected current of 20mA. The increased light intensity exhibits the same trend in a TracePro simulation. In addition, it was also found that the level of leakage current depends on the density of V-shape defects, which were measured by scanning electron microscopy.

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Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights

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