Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers

Chih Ciao Yang, Jinn-Kong Sheu, Min Shun Huang, Shang Ju Tu, Feng Wen Huang, Kuo Hua Chang, Ming Lun Lee, Wei-Chi Lai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, hetero-structure p-i-n type epitaxy wafers were deposited on the GaN/sapphire templates with different buffer layers by the MOVPE system. The absorption layers sandwiched in top p-GaN and bottom n + -GaN layers were designed into different short-period InGaN/GaN superlattice structures with specific pair numbers to maintain a total absorption thickness of 200 nm. As the buffer layer was properly adjusted, the V OC and J SC were enhanced by 35% and 95%, respectively. In addition to material qualities, the thickness of GaN buffer layers and piezoelectric-induced stain in the InGaN film itself also influenced the PV device performance.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VI
DOIs
Publication statusPublished - 2011 May 13
EventGallium Nitride Materials and Devices VI - San Francisco, CA, United States
Duration: 2011 Jan 242011 Jan 27

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7939
ISSN (Print)0277-786X

Other

OtherGallium Nitride Materials and Devices VI
CountryUnited States
CitySan Francisco, CA
Period11-01-2411-01-27

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Yang, C. C., Sheu, J-K., Huang, M. S., Tu, S. J., Huang, F. W., Chang, K. H., Lee, M. L., & Lai, W-C. (2011). Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers. In Gallium Nitride Materials and Devices VI [79391J] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7939). https://doi.org/10.1117/12.876366