Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor

Jing Yuh Chen, Wei Chou Wang, Hsi Jen Pan, Shun Ching Feng, Kuo Hui Yu, Shiou Ying Cheng, Wen Chau Liu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

An InGaP/GaAs delta-doped heterojunction bipolar transistor (HBT) is demonstrated. The device studied exhibits large current gain in the low current regime due to the reduction of the potential spike provided by a doping spike and elimination of the charge storage effect provided by a thin setback layer. The design not only maintains the abruptness of the heterointerface, but also reduces the conduction-band spike. also, the valence-band discontinuity is increased, which greatly reduces the spreading of base dopant into the emitter region. On the other hand, the emitter injection efficiency and hole thermal diffusion current are increased and decreased, respectively.

Original languageEnglish
Pages (from-to)751-756
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number2
DOIs
Publication statusPublished - 2000 Mar 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor'. Together they form a unique fingerprint.

Cite this