An InGaP/GaAs delta-doped heterojunction bipolar transistor (HBT) is demonstrated. The device studied exhibits large current gain in the low current regime due to the reduction of the potential spike provided by a doping spike and elimination of the charge storage effect provided by a thin setback layer. The design not only maintains the abruptness of the heterointerface, but also reduces the conduction-band spike. also, the valence-band discontinuity is increased, which greatly reduces the spreading of base dopant into the emitter region. On the other hand, the emitter injection efficiency and hole thermal diffusion current are increased and decreased, respectively.
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2000 Mar 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering