TY - JOUR
T1 - Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments
AU - Fu, Ssu I.
AU - Cheng, Shiou Ying
AU - Liu, Wen Chau
N1 - Funding Information:
Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 94-2215-E197-002 and NSC 94-2215-E006-060.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2006/5
Y1 - 2006/5
N2 - The characteristics of the InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatment are studied and demonstrated. Based on the use of sulfur passivation, the series resistance of a base-emitter B-E junction can be effectively reduced and the series resistance dominant regimes (decrease of current gain) are presented at a higher collector current regime. The device with sulfur treatment can be operated under extremely low collector current ( IC ≅ 1 0 - 11 A) region, which offers the promise for low-power electronics applications. It is known that, from experimental results, the too long time for sulfur treatment is not necessary. Furthermore, the studied devices with sulfur treatment can remarkably reduce the collector-emitter offset voltage Δ VCE and emitter size effect, and improve the high-frequency performance.
AB - The characteristics of the InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatment are studied and demonstrated. Based on the use of sulfur passivation, the series resistance of a base-emitter B-E junction can be effectively reduced and the series resistance dominant regimes (decrease of current gain) are presented at a higher collector current regime. The device with sulfur treatment can be operated under extremely low collector current ( IC ≅ 1 0 - 11 A) region, which offers the promise for low-power electronics applications. It is known that, from experimental results, the too long time for sulfur treatment is not necessary. Furthermore, the studied devices with sulfur treatment can remarkably reduce the collector-emitter offset voltage Δ VCE and emitter size effect, and improve the high-frequency performance.
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U2 - 10.1016/j.spmi.2005.10.002
DO - 10.1016/j.spmi.2005.10.002
M3 - Article
AN - SCOPUS:33748267495
SN - 0749-6036
VL - 39
SP - 436
EP - 445
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
IS - 5
ER -