Characteristics of InGaP/InGaAs MOS-PHEMT with liquid phase-oxidized GaAs gate dielectric

Hsien Cheng Lin, Cheng Chieh Wu, Fang Ming Lee, Kuan Wei Lee, Feri Adriyanto, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

Abstract

The characteristics of InGaP/InGaAs metal-oxide-semiconductor (MOS) pseudomorphic high-electron-mobility transistor (PHEMT) with liquid phase-oxidized GaAs gate dielectric are demonstrated. Not only MOS-PHEMT has the advantages of the MOS structure, but also has high-carrier density, high-mobility 2DEG channel, and low surface state. The MOS-PHEMT exhibits larger transconductance, lower gate leakage current, higher breakdown voltage, higher cutoff frequency, and lower minimum noise figure compared with its referenced PHEMT counterpart. In addition, low-frequency flicker noise (1f noise) is studied. MOS-PHEMT also exhibits better surface state and negligible generation-recombination noise, resulting in better 1f noise.

Original languageEnglish
Pages (from-to)H1225-H1227
JournalJournal of the Electrochemical Society
Volume158
Issue number12
DOIs
Publication statusPublished - 2011 Nov 22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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