Characteristics of InGaP/InGaAs MOS-PHEMT with liquid phase-oxidized GaAs gate dielectric

Hsien Cheng Lin; Cheng Chieh Wu; Fang Ming Lee; Kuan Wei Lee; Feri Adriyanto; Yeong Her Wang

doi:10.1149/2.048112jes

Characteristics of InGaP/InGaAs MOS-PHEMT with liquid phase-oxidized GaAs gate dielectric

Hsien Cheng Lin, Cheng Chieh Wu, Fang Ming Lee, Kuan Wei Lee, Feri Adriyanto, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

Abstract

The characteristics of InGaP/InGaAs metal-oxide-semiconductor (MOS) pseudomorphic high-electron-mobility transistor (PHEMT) with liquid phase-oxidized GaAs gate dielectric are demonstrated. Not only MOS-PHEMT has the advantages of the MOS structure, but also has high-carrier density, high-mobility 2DEG channel, and low surface state. The MOS-PHEMT exhibits larger transconductance, lower gate leakage current, higher breakdown voltage, higher cutoff frequency, and lower minimum noise figure compared with its referenced PHEMT counterpart. In addition, low-frequency flicker noise (1f noise) is studied. MOS-PHEMT also exhibits better surface state and negligible generation-recombination noise, resulting in better 1f noise.

Original language	English
Pages (from-to)	H1225-H1227
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	12
DOIs	https://doi.org/10.1149/2.048112jes
Publication status	Published - 2011 Nov 22

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

Access to Document

10.1149/2.048112jes

Fingerprint Dive into the research topics of 'Characteristics of InGaP/InGaAs MOS-PHEMT with liquid phase-oxidized GaAs gate dielectric'. Together they form a unique fingerprint.

Cite this

@article{d2228c408df94d12a668611170d2bb3c,

title = "Characteristics of InGaP/InGaAs MOS-PHEMT with liquid phase-oxidized GaAs gate dielectric",

abstract = "The characteristics of InGaP/InGaAs metal-oxide-semiconductor (MOS) pseudomorphic high-electron-mobility transistor (PHEMT) with liquid phase-oxidized GaAs gate dielectric are demonstrated. Not only MOS-PHEMT has the advantages of the MOS structure, but also has high-carrier density, high-mobility 2DEG channel, and low surface state. The MOS-PHEMT exhibits larger transconductance, lower gate leakage current, higher breakdown voltage, higher cutoff frequency, and lower minimum noise figure compared with its referenced PHEMT counterpart. In addition, low-frequency flicker noise (1f noise) is studied. MOS-PHEMT also exhibits better surface state and negligible generation-recombination noise, resulting in better 1f noise.",

author = "Lin, {Hsien Cheng} and Wu, {Cheng Chieh} and Lee, {Fang Ming} and Lee, {Kuan Wei} and Feri Adriyanto and Wang, {Yeong Her}",

year = "2011",

month = nov,

day = "22",

doi = "10.1149/2.048112jes",

language = "English",

volume = "158",

pages = "H1225--H1227",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "12",

}

TY - JOUR

T1 - Characteristics of InGaP/InGaAs MOS-PHEMT with liquid phase-oxidized GaAs gate dielectric

AU - Lin, Hsien Cheng

AU - Wu, Cheng Chieh

AU - Lee, Fang Ming

AU - Lee, Kuan Wei

AU - Adriyanto, Feri

AU - Wang, Yeong Her

PY - 2011/11/22

Y1 - 2011/11/22

N2 - The characteristics of InGaP/InGaAs metal-oxide-semiconductor (MOS) pseudomorphic high-electron-mobility transistor (PHEMT) with liquid phase-oxidized GaAs gate dielectric are demonstrated. Not only MOS-PHEMT has the advantages of the MOS structure, but also has high-carrier density, high-mobility 2DEG channel, and low surface state. The MOS-PHEMT exhibits larger transconductance, lower gate leakage current, higher breakdown voltage, higher cutoff frequency, and lower minimum noise figure compared with its referenced PHEMT counterpart. In addition, low-frequency flicker noise (1f noise) is studied. MOS-PHEMT also exhibits better surface state and negligible generation-recombination noise, resulting in better 1f noise.

AB - The characteristics of InGaP/InGaAs metal-oxide-semiconductor (MOS) pseudomorphic high-electron-mobility transistor (PHEMT) with liquid phase-oxidized GaAs gate dielectric are demonstrated. Not only MOS-PHEMT has the advantages of the MOS structure, but also has high-carrier density, high-mobility 2DEG channel, and low surface state. The MOS-PHEMT exhibits larger transconductance, lower gate leakage current, higher breakdown voltage, higher cutoff frequency, and lower minimum noise figure compared with its referenced PHEMT counterpart. In addition, low-frequency flicker noise (1f noise) is studied. MOS-PHEMT also exhibits better surface state and negligible generation-recombination noise, resulting in better 1f noise.

UR - http://www.scopus.com/inward/record.url?scp=81355132428&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81355132428&partnerID=8YFLogxK

U2 - 10.1149/2.048112jes

DO - 10.1149/2.048112jes

M3 - Article

AN - SCOPUS:81355132428

VL - 158

SP - H1225-H1227

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 12

ER -