Abstract
The characteristics of InGaP/InGaAs metal-oxide-semiconductor (MOS) pseudomorphic high-electron-mobility transistor (PHEMT) with liquid phase-oxidized GaAs gate dielectric are demonstrated. Not only MOS-PHEMT has the advantages of the MOS structure, but also has high-carrier density, high-mobility 2DEG channel, and low surface state. The MOS-PHEMT exhibits larger transconductance, lower gate leakage current, higher breakdown voltage, higher cutoff frequency, and lower minimum noise figure compared with its referenced PHEMT counterpart. In addition, low-frequency flicker noise (1f noise) is studied. MOS-PHEMT also exhibits better surface state and negligible generation-recombination noise, resulting in better 1f noise.
Original language | English |
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Pages (from-to) | H1225-H1227 |
Journal | Journal of the Electrochemical Society |
Volume | 158 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2011 Nov 22 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry