Characteristics of In0.425Al0.575 As-InxGa1-xAs metamorphic HEMTs with pseudomorphic and symmetrically graded channels

Wei Chou Hsu, Yeong Jia Chen, Ching Sung Lee, Tzong Bin Wang, Jun Chin Huang, Dong Hai Huang, Ke Hua Su, Yu Shyan Lin, Chang Luen Wu

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


In0.425Al0.575As-InxGa1-x As metamorphic high electron mobility transistors (MHEMTs) with two different channel designs, grown by molecular beam epitaxy (MBE) system, have been successfully investigated. Comprehensive dc and high-frequency characteristics, including the extrinsic transconductance, current driving capability, device linearity, pinch-off property, gate-voltage swing, breakdown performance, unity-gain cutoff frequency, max. oscillation frequency, output power, and power gain, etc., have been characterized and compared. In addition, complete parametric information of the small-signal device model has also been extracted and discussed for the pseudomorphic channel MHEMT (PC-MHEMT) and the V-shaped symmetrically graded channel MHEMT (SGC-MHEMT), respectively.

Original languageEnglish
Pages (from-to)1079-1086
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number6
Publication statusPublished - 2005 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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