Characteristics of In0.52Al0.48As/In x Ga 1-x As HEMT's with various In x Ga 1-x As channels

Yen Wei Chen, Wei Chou Hsu, Rong Tay Hsu, Yue Huei Wu, Yeong Jia Chen

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


High-linearity In0.52Al0.48As/InxGa 1-xAs HEMT's have been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). The studied devices exhibit high transconductance, low leakage current, high breakdown, and high-linearly operational regime due to good carrier confinement well as the low temperature growth In0.52Al0.48As barrier layer significantly suppresses buffer leakage current. Experimentally, linear operation current regime and gate voltage swing are improved in the structure utilizing a compositionally graded InxGa1-xAs channel due to the compositionally graded InxGa1-xAs channel enhance the device carrier mobility and confinement. An extrinsic transconductance as high as 302 mS/mm at gate length of 1.5 μm is achieved for the In 0.6Ga0.4As channel structure.

Original languageEnglish
Pages (from-to)119-124
Number of pages6
JournalSolid-State Electronics
Issue number1
Publication statusPublished - 2004 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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