Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD

Y. H. Wu, J. S. Su, W. C. Hsu, W. C. Liu, W. Lin

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We have successfully fabricated InGaAs/InP double and single heterostructure-emitter bipolar transistors. The double and single HEBTs exhibit common-emitter current gain of 120 and 41 along with offset voltage of 45 and 50 mV, respectively. These preliminary results demonstrate that HEBT structure can effectively provide a high electron injection and better hole confinement. Moreover, a symmetric structure for reducing the offset voltage is also proposed.

Original languageEnglish
Pages (from-to)767-769
Number of pages3
JournalSolid State Electronics
Volume38
Issue number4
DOIs
Publication statusPublished - 1995 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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