Characteristics of lateral diffused metal-oxide-semiconductor transistors with lightly doped drain implantation through gradual screen oxide

Chin Rung Yan; Jone F. Chen; Chung Yi Lin; Hao Tang Hsu; Yu Jie Liao; Min Ti Yang; Chih Yuan Chen; Yin Chia Lin; Huei Haurng Chen

doi:10.7567/JJAP.52.04CC07

Characteristics of lateral diffused metal-oxide-semiconductor transistors with lightly doped drain implantation through gradual screen oxide

Chin Rung Yan, Jone F. Chen, Chung Yi Lin, Hao Tang Hsu, Yu Jie Liao, Min Ti Yang, Chih Yuan Chen, Yin Chia Lin, Huei Haurng Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Characteristics of lateral diffused metal-oxide-semiconductor (LDMOS) transistors with gradual junction profile by self-alignment implant through dual thicknesses of screen oxide are presented in this letter. Compared with LDMOS transistors with traditional junction profile, this new device shows improved off-state breakdown voltage, less severe in Kirk effect, and wider electrical safe operating area; without sacrificing device drivability. Technology computer aided design (TCAD) simulation results reveal that this new device has smaller electric field both in off-and onstate bias conditions. Hot-carrier induced degradation of this new device under various stress conditions is also investigated and compared with that of the device with traditional junction profile.

Original language	English
Article number	04CC07
Journal	Japanese journal of applied physics
Volume	52
Issue number	4 PART 2
DOIs	https://doi.org/10.7567/JJAP.52.04CC07
Publication status	Published - 2013 Apr

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.7567/JJAP.52.04CC07

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title = "Characteristics of lateral diffused metal-oxide-semiconductor transistors with lightly doped drain implantation through gradual screen oxide",

abstract = "Characteristics of lateral diffused metal-oxide-semiconductor (LDMOS) transistors with gradual junction profile by self-alignment implant through dual thicknesses of screen oxide are presented in this letter. Compared with LDMOS transistors with traditional junction profile, this new device shows improved off-state breakdown voltage, less severe in Kirk effect, and wider electrical safe operating area; without sacrificing device drivability. Technology computer aided design (TCAD) simulation results reveal that this new device has smaller electric field both in off-and onstate bias conditions. Hot-carrier induced degradation of this new device under various stress conditions is also investigated and compared with that of the device with traditional junction profile.",

author = "Yan, {Chin Rung} and Chen, {Jone F.} and Lin, {Chung Yi} and Hsu, {Hao Tang} and Liao, {Yu Jie} and Yang, {Min Ti} and Chen, {Chih Yuan} and Lin, {Yin Chia} and Chen, {Huei Haurng}",

year = "2013",

month = apr,

doi = "10.7567/JJAP.52.04CC07",

language = "English",

volume = "52",

journal = "Japanese Journal of Applied Physics",

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T1 - Characteristics of lateral diffused metal-oxide-semiconductor transistors with lightly doped drain implantation through gradual screen oxide

AU - Yan, Chin Rung

AU - Chen, Jone F.

AU - Lin, Chung Yi

AU - Hsu, Hao Tang

AU - Liao, Yu Jie

AU - Yang, Min Ti

AU - Chen, Chih Yuan

AU - Lin, Yin Chia

AU - Chen, Huei Haurng

PY - 2013/4

Y1 - 2013/4

N2 - Characteristics of lateral diffused metal-oxide-semiconductor (LDMOS) transistors with gradual junction profile by self-alignment implant through dual thicknesses of screen oxide are presented in this letter. Compared with LDMOS transistors with traditional junction profile, this new device shows improved off-state breakdown voltage, less severe in Kirk effect, and wider electrical safe operating area; without sacrificing device drivability. Technology computer aided design (TCAD) simulation results reveal that this new device has smaller electric field both in off-and onstate bias conditions. Hot-carrier induced degradation of this new device under various stress conditions is also investigated and compared with that of the device with traditional junction profile.

AB - Characteristics of lateral diffused metal-oxide-semiconductor (LDMOS) transistors with gradual junction profile by self-alignment implant through dual thicknesses of screen oxide are presented in this letter. Compared with LDMOS transistors with traditional junction profile, this new device shows improved off-state breakdown voltage, less severe in Kirk effect, and wider electrical safe operating area; without sacrificing device drivability. Technology computer aided design (TCAD) simulation results reveal that this new device has smaller electric field both in off-and onstate bias conditions. Hot-carrier induced degradation of this new device under various stress conditions is also investigated and compared with that of the device with traditional junction profile.

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Characteristics of lateral diffused metal-oxide-semiconductor transistors with lightly doped drain implantation through gradual screen oxide

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