Characteristics of lateral diffused metal-oxide-semiconductor transistors with lightly doped drain implantation through gradual screen oxide

Chin Rung Yan, Jone F. Chen, Chung Yi Lin, Hao Tang Hsu, Yu Jie Liao, Min Ti Yang, Chih Yuan Chen, Yin Chia Lin, Huei Haurng Chen

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Characteristics of lateral diffused metal-oxide-semiconductor (LDMOS) transistors with gradual junction profile by self-alignment implant through dual thicknesses of screen oxide are presented in this letter. Compared with LDMOS transistors with traditional junction profile, this new device shows improved off-state breakdown voltage, less severe in Kirk effect, and wider electrical safe operating area; without sacrificing device drivability. Technology computer aided design (TCAD) simulation results reveal that this new device has smaller electric field both in off-and onstate bias conditions. Hot-carrier induced degradation of this new device under various stress conditions is also investigated and compared with that of the device with traditional junction profile.

Original languageEnglish
Article number04CC07
JournalJapanese journal of applied physics
Volume52
Issue number4 PART 2
DOIs
Publication statusPublished - 2013 Apr

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Characteristics of lateral diffused metal-oxide-semiconductor transistors with lightly doped drain implantation through gradual screen oxide'. Together they form a unique fingerprint.

Cite this