@inproceedings{9a70bdd69b9a4746a045ecd77c6859c1,
title = "Characteristics of liquid-phase-deposited SrTiO 3 films on GaN and AlGaN/GaN wafer",
abstract = "Through a simple, low-temperature liquid-phase deposition (LPD) method, SrTiO 3 thin films were deposited on GaN as the gate dielectric for metal oxide semiconductor high electron mobility transistor application. X-ray photoelectron spectroscopy was employed to characterize the films. Electrical characteristics of the SrTiO 3 films on GaN showed that the lowest leakage current was 4.2×10 -9 A/cm 2 at -1 MV/cm after annealing at 400°C AlGaN/GaN MOSHEMTs with LPD-SrTiO 3 of 20 nm-thick as the gate dielectric were also fabricated. The suppressed gate leakage current improves both subthreshold slope and on/off current ratio. Wider gate voltage swing and flatter transconductance of the MOSHEMT demonstrate better device linearity.",
author = "Wu, {Tsu Yi} and Sze, {Po Wen} and Hu, {Chih Chun} and Huang, {Tong Jyun} and Feri Adriyanto and Wu, {Chang Luen} and Wang, {Yeong Her}",
year = "2011",
month = dec,
day = "1",
doi = "10.1149/1.3633057",
language = "English",
isbn = "9781566779036",
series = "ECS Transactions",
number = "3",
pages = "423--428",
booktitle = "Physics and Technology of High-k Materials 9",
edition = "3",
note = "9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting ; Conference date: 10-10-2011 Through 12-10-2011",
}