Characteristics of liquid-phase-deposited SrTiO 3 films on GaN and AlGaN/GaN wafer

Tsu Yi Wu, Po Wen Sze, Chih Chun Hu, Tong Jyun Huang, Feri Adriyanto, Chang Luen Wu, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Through a simple, low-temperature liquid-phase deposition (LPD) method, SrTiO 3 thin films were deposited on GaN as the gate dielectric for metal oxide semiconductor high electron mobility transistor application. X-ray photoelectron spectroscopy was employed to characterize the films. Electrical characteristics of the SrTiO 3 films on GaN showed that the lowest leakage current was 4.2×10 -9 A/cm 2 at -1 MV/cm after annealing at 400°C AlGaN/GaN MOSHEMTs with LPD-SrTiO 3 of 20 nm-thick as the gate dielectric were also fabricated. The suppressed gate leakage current improves both subthreshold slope and on/off current ratio. Wider gate voltage swing and flatter transconductance of the MOSHEMT demonstrate better device linearity.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 9
Pages423-428
Number of pages6
Edition3
DOIs
Publication statusPublished - 2011 Dec 1
Event9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 102011 Oct 12

Publication series

NameECS Transactions
Number3
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11-10-1011-10-12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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