Characteristics of mesa- and air-type In0.5Al 0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate

M. K. Hsu; H. R. Chen; S. Y. Chiu; W. T. Chen; W. C. Liu; J. H. Tasi; W. S. Lour

doi:10.1088/0268-1242/22/2/007

Characteristics of mesa- and air-type In_0.5Al _0.5As/In_0.5Ga_0.5As metamorphic HEMTs with or without a buried gate

M. K. Hsu, H. R. Chen, S. Y. Chiu, W. T. Chen, W. C. Liu, J. H. Tasi, W. S. Lour

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Depletion-mode δ-doped In_0.5Ga_0.5As/In _0.5Al_0.5As mHEMTs have been metamorphically grown on a GaAs substrate and successfully fabricated with different kinds of gate-metal formation. The gate-metal formations include a combination of mesa- or air-type gate feeder with or without a buried gate (before or after annealing). Only the air-type mHEMT with a buried gate shows no clear kink-effect behaviour. For a 1 νm gate mesa-type (air-type) mHEMT, a maximum extrinsic transconductance of 412 (414) and 535 (472) mS mm^-1 is obtained before annealing and after annealing. There is a 207 mV (205 mV) shift in V_TH after the mesa-type (air-type) mHEMT is annealed. Experimental results indicate that both the gate-feeder metal and the annealing process have a significant effect on output conductance, gate leakage current, breakdown voltage, high frequency and noise performances. The peak gate leakage current density of 12 (120) νA mm^-1 for the air-type (mesa-type) mHEMT before annealing is improved to 8 (55) νA mm^-1 after annealing. At 2.4 (5.4) GHz, gain ≤ 23 (20) dB can be obtained at F_min ≤ 1.27 (1.76) dB for the air-type mHEMT after annealing, while gain ≤ 22 (18.5) dB is obtained at F _min ≤ 1.36 (2.0) dB before annealing. For the mesa-type mHEMT, these values are gain ≤ 20 (16.5) dB at F_min ≤ 1.47 (2.25) dB and gain ≤ 19.5 (14) dB at F_min ≤ 1.68 (3.11) dB.

Original language	English
Article number	007
Pages (from-to)	35-42
Number of pages	8
Journal	Semiconductor Science and Technology
Volume	22
Issue number	2
DOIs	https://doi.org/10.1088/0268-1242/22/2/007
Publication status	Published - 2007 Feb 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1088/0268-1242/22/2/007

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@article{6630606392df4c238d94352f31c7baab,

title = "Characteristics of mesa- and air-type In0.5Al 0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate",

abstract = "Depletion-mode δ-doped In0.5Ga0.5As/In 0.5Al0.5As mHEMTs have been metamorphically grown on a GaAs substrate and successfully fabricated with different kinds of gate-metal formation. The gate-metal formations include a combination of mesa- or air-type gate feeder with or without a buried gate (before or after annealing). Only the air-type mHEMT with a buried gate shows no clear kink-effect behaviour. For a 1 νm gate mesa-type (air-type) mHEMT, a maximum extrinsic transconductance of 412 (414) and 535 (472) mS mm-1 is obtained before annealing and after annealing. There is a 207 mV (205 mV) shift in VTH after the mesa-type (air-type) mHEMT is annealed. Experimental results indicate that both the gate-feeder metal and the annealing process have a significant effect on output conductance, gate leakage current, breakdown voltage, high frequency and noise performances. The peak gate leakage current density of 12 (120) νA mm-1 for the air-type (mesa-type) mHEMT before annealing is improved to 8 (55) νA mm-1 after annealing. At 2.4 (5.4) GHz, gain ≤ 23 (20) dB can be obtained at Fmin ≤ 1.27 (1.76) dB for the air-type mHEMT after annealing, while gain ≤ 22 (18.5) dB is obtained at F min ≤ 1.36 (2.0) dB before annealing. For the mesa-type mHEMT, these values are gain ≤ 20 (16.5) dB at Fmin ≤ 1.47 (2.25) dB and gain ≤ 19.5 (14) dB at Fmin ≤ 1.68 (3.11) dB.",

author = "Hsu, {M. K.} and Chen, {H. R.} and Chiu, {S. Y.} and Chen, {W. T.} and Liu, {W. C.} and Tasi, {J. H.} and Lour, {W. S.}",

year = "2007",

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doi = "10.1088/0268-1242/22/2/007",

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T1 - Characteristics of mesa- and air-type In0.5Al 0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate

AU - Hsu, M. K.

AU - Chen, H. R.

AU - Chiu, S. Y.

AU - Chen, W. T.

AU - Liu, W. C.

AU - Tasi, J. H.

AU - Lour, W. S.

PY - 2007/2/1

Y1 - 2007/2/1

N2 - Depletion-mode δ-doped In0.5Ga0.5As/In 0.5Al0.5As mHEMTs have been metamorphically grown on a GaAs substrate and successfully fabricated with different kinds of gate-metal formation. The gate-metal formations include a combination of mesa- or air-type gate feeder with or without a buried gate (before or after annealing). Only the air-type mHEMT with a buried gate shows no clear kink-effect behaviour. For a 1 νm gate mesa-type (air-type) mHEMT, a maximum extrinsic transconductance of 412 (414) and 535 (472) mS mm-1 is obtained before annealing and after annealing. There is a 207 mV (205 mV) shift in VTH after the mesa-type (air-type) mHEMT is annealed. Experimental results indicate that both the gate-feeder metal and the annealing process have a significant effect on output conductance, gate leakage current, breakdown voltage, high frequency and noise performances. The peak gate leakage current density of 12 (120) νA mm-1 for the air-type (mesa-type) mHEMT before annealing is improved to 8 (55) νA mm-1 after annealing. At 2.4 (5.4) GHz, gain ≤ 23 (20) dB can be obtained at Fmin ≤ 1.27 (1.76) dB for the air-type mHEMT after annealing, while gain ≤ 22 (18.5) dB is obtained at F min ≤ 1.36 (2.0) dB before annealing. For the mesa-type mHEMT, these values are gain ≤ 20 (16.5) dB at Fmin ≤ 1.47 (2.25) dB and gain ≤ 19.5 (14) dB at Fmin ≤ 1.68 (3.11) dB.

AB - Depletion-mode δ-doped In0.5Ga0.5As/In 0.5Al0.5As mHEMTs have been metamorphically grown on a GaAs substrate and successfully fabricated with different kinds of gate-metal formation. The gate-metal formations include a combination of mesa- or air-type gate feeder with or without a buried gate (before or after annealing). Only the air-type mHEMT with a buried gate shows no clear kink-effect behaviour. For a 1 νm gate mesa-type (air-type) mHEMT, a maximum extrinsic transconductance of 412 (414) and 535 (472) mS mm-1 is obtained before annealing and after annealing. There is a 207 mV (205 mV) shift in VTH after the mesa-type (air-type) mHEMT is annealed. Experimental results indicate that both the gate-feeder metal and the annealing process have a significant effect on output conductance, gate leakage current, breakdown voltage, high frequency and noise performances. The peak gate leakage current density of 12 (120) νA mm-1 for the air-type (mesa-type) mHEMT before annealing is improved to 8 (55) νA mm-1 after annealing. At 2.4 (5.4) GHz, gain ≤ 23 (20) dB can be obtained at Fmin ≤ 1.27 (1.76) dB for the air-type mHEMT after annealing, while gain ≤ 22 (18.5) dB is obtained at F min ≤ 1.36 (2.0) dB before annealing. For the mesa-type mHEMT, these values are gain ≤ 20 (16.5) dB at Fmin ≤ 1.47 (2.25) dB and gain ≤ 19.5 (14) dB at Fmin ≤ 1.68 (3.11) dB.

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Characteristics of mesa- and air-type In_0.5Al _0.5As/In_0.5Ga_0.5As metamorphic HEMTs with or without a buried gate

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