Characteristics of mesa- and air-type In_0.5Al _0.5As/In_0.5Ga_0.5As metamorphic HEMTs with or without a buried gate

Physics & Astronomy

• air 51%
• annealing 46%
• current density 6%
• depletion 8%
• electrical faults 9%
• feeders 26%
• high electron mobility transistors 89%
• leakage 15%
• mesas 99%
• metals 14%
• output 5%
• performance 4%
• shift 5%
• transconductance 10%

Engineering & Materials Science

• Air 47%
• Annealing 85%
• Current density 10%
• Electric breakdown 12%
• High electron mobility transistors 100%
• Leakage currents 23%
• Metals 20%
• Substrates 7%
• Transconductance 12%

Chemical Compounds

• Annealing 67%
• Breakdown Voltage 16%
• Conductance 10%
• Current Density 7%
• Leakage Current 28%
• Metal 4%
• Transconductance 16%