Abstract
Wavelength and temperature-dependent characteristics of silicon P-I-N laser detectors are studied using the modified Baraff theory.Both the electron or hole injection effect and photogeneration effect are considered in the calculation of the power spectral density of multiplication noise and efficiencies.The results thus obtained are compared with previous papers where the photogeneration effect was neglected.
Original language | English |
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Pages (from-to) | 3510-3512 |
Number of pages | 3 |
Journal | Applied optics |
Volume | 18 |
Issue number | 20 |
DOIs | |
Publication status | Published - 1979 Oct 15 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Engineering (miscellaneous)
- Electrical and Electronic Engineering