Characteristics of P-I-N laser detectors: Their dependence on wavelength and temperature

Y. K. Su, C. Y. Chang, T. S. Wu, B. D. Liu, Y. K. Fang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Wavelength and temperature-dependent characteristics of silicon P-I-N laser detectors are studied using the modified Baraff theory.Both the electron or hole injection effect and photogeneration effect are considered in the calculation of the power spectral density of multiplication noise and efficiencies.The results thus obtained are compared with previous papers where the photogeneration effect was neglected.

Original languageEnglish
Pages (from-to)3510-3512
Number of pages3
JournalApplied optics
Volume18
Issue number20
DOIs
Publication statusPublished - 1979 Oct 15

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

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