TY - JOUR
T1 - Characteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applications
AU - Yang, Hung Pin D.
AU - Liu, Jui Nung
AU - Lai, Fang I.
AU - Kuo, Hao Chung
AU - Chi, Jim Y.
PY - 2007/5/8
Y1 - 2007/5/8
N2 - A small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.
AB - A small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.
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U2 - 10.1143/JJAP.46.2941
DO - 10.1143/JJAP.46.2941
M3 - Article
AN - SCOPUS:34547889189
SN - 0021-4922
VL - 46
SP - 2941
EP - 2943
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 5 A
ER -