Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-κ gate dielectric

Ming Wen Ma; Chih Yang Chen; Chun Jung Su; Woei Cherng Wu; Yi Hong Wu; Kuo Hsing Kao; Tien Sheng Chao; Tan Fu Lei

doi:10.1109/LED.2007.914091

Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-κ gate dielectric

Ming Wen Ma, Chih Yang Chen, Chun Jung Su, Woei Cherng Wu, Yi Hong Wu, Kuo Hsing Kao, Tien Sheng Chao, Tan Fu Lei

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

In this letter, the characteristics of positive bias temperature instability (PBTI) and hot carrier stress (HCS) for the low-temperature poly-Si thin-film transistors (LTPS-TFTs) with HfO₂ gate dielectric are well investigated for the first time. Under room temperature stress condition, the PBTI shows a more serious degradation than does HCS, indicating that the gate bias stress would dominate the hot carrier degradation behavior for HfO₂ LTPS-TFT. In addition, an abnormal behavior of the I_min degradation with different drain bias stress under high-temperature stress condition is also observed and identified in this letter. The degradation of device's performance under high-temperature stress condition can be attributed to the damages of both the HfO₂ gate dielectric and the poly-Si grain boundaries.

Original language	English
Pages (from-to)	171-173
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	2
DOIs	https://doi.org/10.1109/LED.2007.914091
Publication status	Published - 2008 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2007.914091

Cite this

@article{cc54816efe0842d3961b401a45c888db,

title = "Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-κ gate dielectric",

abstract = "In this letter, the characteristics of positive bias temperature instability (PBTI) and hot carrier stress (HCS) for the low-temperature poly-Si thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric are well investigated for the first time. Under room temperature stress condition, the PBTI shows a more serious degradation than does HCS, indicating that the gate bias stress would dominate the hot carrier degradation behavior for HfO2 LTPS-TFT. In addition, an abnormal behavior of the Imin degradation with different drain bias stress under high-temperature stress condition is also observed and identified in this letter. The degradation of device's performance under high-temperature stress condition can be attributed to the damages of both the HfO2 gate dielectric and the poly-Si grain boundaries.",

author = "Ma, {Ming Wen} and Chen, {Chih Yang} and Su, {Chun Jung} and Wu, {Woei Cherng} and Wu, {Yi Hong} and Kao, {Kuo Hsing} and Chao, {Tien Sheng} and Lei, {Tan Fu}",

note = "Funding Information: The authors would like to thank the processes support from the National Nano Device Laboratories and the Nano Facility Center of the National Chiao Tung University. Funding Information: Manuscript received October 4, 2007; revised November 14, 2007. This work was supported by the National Science Council, Taiwan, under Contract NSC-95-2221-E-009-272. The review of this letter was arranged by Editor J. Sin.",

year = "2008",

month = feb,

doi = "10.1109/LED.2007.914091",

language = "English",

volume = "29",

pages = "171--173",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-κ gate dielectric

AU - Ma, Ming Wen

AU - Chen, Chih Yang

AU - Su, Chun Jung

AU - Wu, Woei Cherng

AU - Wu, Yi Hong

AU - Kao, Kuo Hsing

AU - Chao, Tien Sheng

AU - Lei, Tan Fu

N1 - Funding Information: The authors would like to thank the processes support from the National Nano Device Laboratories and the Nano Facility Center of the National Chiao Tung University. Funding Information: Manuscript received October 4, 2007; revised November 14, 2007. This work was supported by the National Science Council, Taiwan, under Contract NSC-95-2221-E-009-272. The review of this letter was arranged by Editor J. Sin.

PY - 2008/2

Y1 - 2008/2

N2 - In this letter, the characteristics of positive bias temperature instability (PBTI) and hot carrier stress (HCS) for the low-temperature poly-Si thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric are well investigated for the first time. Under room temperature stress condition, the PBTI shows a more serious degradation than does HCS, indicating that the gate bias stress would dominate the hot carrier degradation behavior for HfO2 LTPS-TFT. In addition, an abnormal behavior of the Imin degradation with different drain bias stress under high-temperature stress condition is also observed and identified in this letter. The degradation of device's performance under high-temperature stress condition can be attributed to the damages of both the HfO2 gate dielectric and the poly-Si grain boundaries.

AB - In this letter, the characteristics of positive bias temperature instability (PBTI) and hot carrier stress (HCS) for the low-temperature poly-Si thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric are well investigated for the first time. Under room temperature stress condition, the PBTI shows a more serious degradation than does HCS, indicating that the gate bias stress would dominate the hot carrier degradation behavior for HfO2 LTPS-TFT. In addition, an abnormal behavior of the Imin degradation with different drain bias stress under high-temperature stress condition is also observed and identified in this letter. The degradation of device's performance under high-temperature stress condition can be attributed to the damages of both the HfO2 gate dielectric and the poly-Si grain boundaries.

UR - http://www.scopus.com/inward/record.url?scp=39549087202&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39549087202&partnerID=8YFLogxK

U2 - 10.1109/LED.2007.914091

DO - 10.1109/LED.2007.914091

M3 - Article

AN - SCOPUS:39549087202

SN - 0741-3106

VL - 29

SP - 171

EP - 173

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-κ gate dielectric

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this