Characteristics of Pd/InGaP Schottky Diodes Hydrogen Sensors

Kun Wei Lin; Huey Ing Chen; Hung Ming Chuang; Chun Yuan Chen; Chun Tsen Lu; Chin Chuan Cheng; Wen Chau Liu

doi:10.1109/JSEN.2003.820320

Characteristics of Pd/InGaP Schottky Diodes Hydrogen Sensors

Kun Wei Lin, Huey Ing Chen, Hung Ming Chuang, Chun Yuan Chen, Chun Tsen Lu, Chin Chuan Cheng, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

Pd/InGaP hydrogen sensors based on the metaloxide-semiconductor (MOS) and metal-semiconductor Schottky diodes have been fabricated and systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, barrier height variation, hydrogen coverage, and heat of adsorption are investigated. The studied devices exhibit very wide hydrogen concentration detection regimes and remarkable hydrogen-sensing properties. Particularly, an extremely low hydrogen concentration of 15 ppm H₂/air at room temperature can be detected. In addition, under the presence of oxide layers in the studied MOS device structure, the enhancements of barrier height and high-temperature operating capability are observed. The initial heat of adsorption for Pd/oxide and Pd/semiconductor interface are calculated as 355 and 65.9 meV/atom, respectively. Furthermore, the considerably short response times are found in studied devices.

Original language	English
Pages (from-to)	72-79
Number of pages	8
Journal	IEEE Sensors Journal
Volume	4
Issue number	1
DOIs	https://doi.org/10.1109/JSEN.2003.820320
Publication status	Published - 2004 Feb

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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10.1109/JSEN.2003.820320

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@article{e76525023ae5428ca7890fdff9030fb5,

title = "Characteristics of Pd/InGaP Schottky Diodes Hydrogen Sensors",

abstract = "Pd/InGaP hydrogen sensors based on the metaloxide-semiconductor (MOS) and metal-semiconductor Schottky diodes have been fabricated and systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, barrier height variation, hydrogen coverage, and heat of adsorption are investigated. The studied devices exhibit very wide hydrogen concentration detection regimes and remarkable hydrogen-sensing properties. Particularly, an extremely low hydrogen concentration of 15 ppm H2/air at room temperature can be detected. In addition, under the presence of oxide layers in the studied MOS device structure, the enhancements of barrier height and high-temperature operating capability are observed. The initial heat of adsorption for Pd/oxide and Pd/semiconductor interface are calculated as 355 and 65.9 meV/atom, respectively. Furthermore, the considerably short response times are found in studied devices.",

author = "Lin, {Kun Wei} and Chen, {Huey Ing} and Chuang, {Hung Ming} and Chen, {Chun Yuan} and Lu, {Chun Tsen} and Cheng, {Chin Chuan} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received January 15, 2003; revised May 20, 2003. This work was supported by the National Science Council of the Republic of China under Contract NSC 91-2215-E-006-016. The associate editor coordinating the review of this paper and approving it for publication was Prof. Jan Soderkvist.",

year = "2004",

month = feb,

doi = "10.1109/JSEN.2003.820320",

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AU - Lin, Kun Wei

AU - Chen, Huey Ing

AU - Chuang, Hung Ming

AU - Chen, Chun Yuan

AU - Lu, Chun Tsen

AU - Cheng, Chin Chuan

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received January 15, 2003; revised May 20, 2003. This work was supported by the National Science Council of the Republic of China under Contract NSC 91-2215-E-006-016. The associate editor coordinating the review of this paper and approving it for publication was Prof. Jan Soderkvist.

PY - 2004/2

Y1 - 2004/2

N2 - Pd/InGaP hydrogen sensors based on the metaloxide-semiconductor (MOS) and metal-semiconductor Schottky diodes have been fabricated and systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, barrier height variation, hydrogen coverage, and heat of adsorption are investigated. The studied devices exhibit very wide hydrogen concentration detection regimes and remarkable hydrogen-sensing properties. Particularly, an extremely low hydrogen concentration of 15 ppm H2/air at room temperature can be detected. In addition, under the presence of oxide layers in the studied MOS device structure, the enhancements of barrier height and high-temperature operating capability are observed. The initial heat of adsorption for Pd/oxide and Pd/semiconductor interface are calculated as 355 and 65.9 meV/atom, respectively. Furthermore, the considerably short response times are found in studied devices.

AB - Pd/InGaP hydrogen sensors based on the metaloxide-semiconductor (MOS) and metal-semiconductor Schottky diodes have been fabricated and systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, barrier height variation, hydrogen coverage, and heat of adsorption are investigated. The studied devices exhibit very wide hydrogen concentration detection regimes and remarkable hydrogen-sensing properties. Particularly, an extremely low hydrogen concentration of 15 ppm H2/air at room temperature can be detected. In addition, under the presence of oxide layers in the studied MOS device structure, the enhancements of barrier height and high-temperature operating capability are observed. The initial heat of adsorption for Pd/oxide and Pd/semiconductor interface are calculated as 355 and 65.9 meV/atom, respectively. Furthermore, the considerably short response times are found in studied devices.

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Characteristics of Pd/InGaP Schottky Diodes Hydrogen Sensors

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