Characteristics of profiled lightly-doped drain MOSFETs

Bin-Da Liu, I. K. Chien

Research output: Contribution to journalArticle

Abstract

Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.

Original languageEnglish
Pages (from-to)711-716
Number of pages6
JournalInternational Journal of Electronics
Volume73
Issue number4
DOIs
Publication statusPublished - 1992 Jan 1

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Transconductance

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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Liu, Bin-Da ; Chien, I. K. / Characteristics of profiled lightly-doped drain MOSFETs. In: International Journal of Electronics. 1992 ; Vol. 73, No. 4. pp. 711-716.
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Characteristics of profiled lightly-doped drain MOSFETs. / Liu, Bin-Da; Chien, I. K.

In: International Journal of Electronics, Vol. 73, No. 4, 01.01.1992, p. 711-716.

Research output: Contribution to journalArticle

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