Characteristics of profiled lightly-doped drain MOSFETs

B. D. Liu, I. K. Chien

Research output: Contribution to journalArticlepeer-review

Abstract

Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.

Original languageEnglish
Pages (from-to)711-716
Number of pages6
JournalInternational Journal of Electronics
Volume73
Issue number4
DOIs
Publication statusPublished - 1992 Oct

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Characteristics of profiled lightly-doped drain MOSFETs'. Together they form a unique fingerprint.

Cite this