Characteristics of profiled lightly-doped drain MOSFETs

B. D. Liu; I. K. Chien

doi:10.1080/00207219208925705

Characteristics of profiled lightly-doped drain MOSFETs

B. D. Liu
, I. K. Chien

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.

Original language	English
Pages (from-to)	711-716
Number of pages	6
Journal	International Journal of Electronics
Volume	73
Issue number	4
DOIs	https://doi.org/10.1080/00207219208925705
Publication status	Published - 1992 Oct

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1080/00207219208925705

Cite this

@article{1331b1236b724299acbce63870a1af9b,

title = "Characteristics of profiled lightly-doped drain MOSFETs",

abstract = "Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.",

author = "Liu, \{B. D.\} and Chien, \{I. K.\}",

note = "Funding Information: The authors would like to thank Dr C. Y. Chang for his valuable suggestion. This work was supported in part by the National Science Council, Republic of China.",

year = "1992",

month = oct,

doi = "10.1080/00207219208925705",

language = "English",

volume = "73",

pages = "711--716",

journal = "International Journal of Electronics",

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publisher = "Taylor and Francis Ltd.",

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T1 - Characteristics of profiled lightly-doped drain MOSFETs

AU - Liu, B. D.

AU - Chien, I. K.

N1 - Funding Information: The authors would like to thank Dr C. Y. Chang for his valuable suggestion. This work was supported in part by the National Science Council, Republic of China.

PY - 1992/10

Y1 - 1992/10

N2 - Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.

AB - Profiled lightly-doped drain (PLDD) MOSFETs are fabricated. Their characteristics are compared with those of other device structures. The current driving capability and transconductance of LDD devices can be increased with PLDD structures.

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DO - 10.1080/00207219208925705

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JO - International Journal of Electronics

JF - International Journal of Electronics

IS - 4

ER -

Characteristics of profiled lightly-doped drain MOSFETs

Abstract

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