Characteristics of quantum dots and single-phase p-CuInSe2 nanowire arrays electrodeposited as schottky diodes with a silver contact

Yu Song Cheng, Na Fu Wang, Yu Zen Tsai, Jia Jun Lin, Mau Phon Houng

Research output: Contribution to journalArticle

Abstract

CuInSe2 nanowire (NW) arrays were prepared in a heated electrolyte (45C) through anodized aluminum oxide template–assisted pulse electrodeposition. After the CuInSe2 NWs were as-grown, grazing incidence X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) revealed the recrystallization status of the CuInSe2 NWs annealed at temperatures ranging from 250C to 550C. The results indicated that the NWs underwent a phase transformation from the (204/220) plane to the (112) plane. Additionally, the material particle size and quantum dots were measured using HRTEM and ultraviolet/visible spectroscopy. The particle size of the as-grown CuInSe2 NWs ranged from 3.8 to 8 nm. The as-grown CuInSe2 NWs exhibited a blue-shift in the material absorption band at 1100 and 1200 nm compared with those annealed at 550C. The results of scanning electron microscopy had a diameter and length of 80 nm and 2.2 μm, respectively. Mott–Schottky and ohmic contact plots revealed that the CuInSe2 NWs were p-type semiconductors. Moreover, the different leakage current mechanisms of the nonideal Schottky diode were studied. Finally, near-ideal Schottky barrier diodes were obtained at an annealing temperature of 550C, and their work function was estimated to be in the range of 5.04–5.13 eV.

Original languageEnglish
Pages (from-to)N221-N226
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number12
DOIs
Publication statusPublished - 2017 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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