TY - JOUR
T1 - Characteristics of Si/SiO2 interface properties for CMOS fabricated on hybrid orientation substrate using amorphization/templated recrystallization (ATR) method
AU - Huang, Po Chin
AU - Wu, San Lein
AU - Chang, Shoou Jinn
AU - Huang, Yao Tsung
AU - Chen, Jone F.
AU - Lin, Chien Ting
AU - Ma, Mike
AU - Cheng, Osbert
N1 - Funding Information:
Manuscript received April 10, 2010; revised February 8, 2011; accepted February 24, 2011. Date of publication April 7, 2011; date of current version May 20, 2011. This work was supported in part by the National Science Council (NSC) of Taiwan under Contract NSC 99-2221-E-230-019 and in part by the Center for Frontier Materials and Micro/Nano Science and Technology and the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education. The review of this paper was arranged by Editor R. Huang.
PY - 2011/6
Y1 - 2011/6
N2 - In this paper, for the hybrid orientation technology (HOT), we propose a modified amorphization/templated recrystallization (ATR) process to improve the material quality. The characterization of Si/SiO2 interface properties for complementary metal-oxide-semiconductor (CMOS) devices fabricated on HOT wafers is demonstrated through charge pumping (CP) and low-frequency (1/f) noise measurements simultaneously. For n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs), devices with the increased defect-removal annealing time bring out a significant decrease in the CP current and the 1/f noise. The results indicate that ATR-induced defects are further repaired and consequently achieve a well Si/SiO2 interface. In addition, the driving current improvement is observed in devices with a small dimension utilizing the modified ATR process. For p-type MOSFETs (pMOSFETs), the direct-current characteristic, CP, and 1/f noise results are comparable between both HOT wafers. It means that the modified process would not affect bonded (110) regions and degrade the device performance. Hence, this modified process could be adopted to improve the fabrication of the CMOS on the HOT wafer using the ATR method. Moreover, the physical origins of the 1/f noise is attributed to a fluctuation in the mobility of free carriers for pMOSFETs and a unified model, incorporating both the carrier-number and correlated mobility fluctuations, for nMOSFETs.
AB - In this paper, for the hybrid orientation technology (HOT), we propose a modified amorphization/templated recrystallization (ATR) process to improve the material quality. The characterization of Si/SiO2 interface properties for complementary metal-oxide-semiconductor (CMOS) devices fabricated on HOT wafers is demonstrated through charge pumping (CP) and low-frequency (1/f) noise measurements simultaneously. For n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs), devices with the increased defect-removal annealing time bring out a significant decrease in the CP current and the 1/f noise. The results indicate that ATR-induced defects are further repaired and consequently achieve a well Si/SiO2 interface. In addition, the driving current improvement is observed in devices with a small dimension utilizing the modified ATR process. For p-type MOSFETs (pMOSFETs), the direct-current characteristic, CP, and 1/f noise results are comparable between both HOT wafers. It means that the modified process would not affect bonded (110) regions and degrade the device performance. Hence, this modified process could be adopted to improve the fabrication of the CMOS on the HOT wafer using the ATR method. Moreover, the physical origins of the 1/f noise is attributed to a fluctuation in the mobility of free carriers for pMOSFETs and a unified model, incorporating both the carrier-number and correlated mobility fluctuations, for nMOSFETs.
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U2 - 10.1109/TED.2011.2126047
DO - 10.1109/TED.2011.2126047
M3 - Article
AN - SCOPUS:79957634289
SN - 0018-9383
VL - 58
SP - 1635
EP - 1642
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 6
M1 - 5742995
ER -