TY - JOUR
T1 - Characteristics of spike-free single and double heterostructure-emitter bipolar transistors
AU - Lin, Yu Shyan
AU - Hsu, Wei Chou
AU - Jong, Fuh Cheng
AU - Chiou, Yu Zung
AU - Chen, Yeong Jia
AU - Tang, Jing Jou
PY - 2004/6
Y1 - 2004/6
N2 - In this study, we propose single and double heterostructure-emitter bipolar transistors (SHEBTs and DHEBT, respectively) with undoped spacers inserted on both sides of the base, The spike-free HEBT is achieved by solving Poisson's equation. The SHEBT and DHEBT with 100 Å spacers exhibit common-emitter current gains of 200 and 120, along with offset voltages of 80 and 50 mV, respectively. Meanwhile, the current gains of the passivated SHEBT and DHEBT reach 360 and 180, respectively. The passivated SHEBT with 100 Å spacer exhibits a current gain over unity at ultralow current densities of 10-5 A/cm2. Additionally, experimental results for different spacer thicknesses demonstrate that the 100 Å spacer yields the highest current gain.
AB - In this study, we propose single and double heterostructure-emitter bipolar transistors (SHEBTs and DHEBT, respectively) with undoped spacers inserted on both sides of the base, The spike-free HEBT is achieved by solving Poisson's equation. The SHEBT and DHEBT with 100 Å spacers exhibit common-emitter current gains of 200 and 120, along with offset voltages of 80 and 50 mV, respectively. Meanwhile, the current gains of the passivated SHEBT and DHEBT reach 360 and 180, respectively. The passivated SHEBT with 100 Å spacer exhibits a current gain over unity at ultralow current densities of 10-5 A/cm2. Additionally, experimental results for different spacer thicknesses demonstrate that the 100 Å spacer yields the highest current gain.
UR - http://www.scopus.com/inward/record.url?scp=4344619874&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4344619874&partnerID=8YFLogxK
U2 - 10.1143/JJAP.43.3285
DO - 10.1143/JJAP.43.3285
M3 - Article
AN - SCOPUS:4344619874
SN - 0021-4922
VL - 43
SP - 3285
EP - 3288
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6 A
ER -