1 Citation (Scopus)

Abstract

Pt/Al2O3 thin films were prepared using a reactive co-sputtering deposition technique. Two types of power controls were used. In one type, both the DC (for the Pt target) and RF power (for the Al2O3 target) were on for the entire deposition period. In the second type, the RF power was always on while the DC power was pulsed. The resulting materials were analyzed using glazing incident X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy. The optical performance of the obtained films was examined using UV–vis–NIR spectrophotometry and Fourier transform infrared spectrometry. We show that the films obtained using the second type power control results in desired microstructures, leading to a total optical absorptance of 0.80.

Original languageEnglish
Pages (from-to)19393-19396
Number of pages4
JournalCeramics International
Volume42
Issue number16
DOIs
Publication statusPublished - 2016 Dec 1

Fingerprint

Power control
Thin films
Spectrophotometry
Spectrometry
Sputtering
Fourier transforms
X ray photoelectron spectroscopy
Transmission electron microscopy
Infrared radiation
X ray diffraction
Microstructure

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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title = "Characteristics of sputter deposited Pt/Al2O3 thin films",
abstract = "Pt/Al2O3 thin films were prepared using a reactive co-sputtering deposition technique. Two types of power controls were used. In one type, both the DC (for the Pt target) and RF power (for the Al2O3 target) were on for the entire deposition period. In the second type, the RF power was always on while the DC power was pulsed. The resulting materials were analyzed using glazing incident X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy. The optical performance of the obtained films was examined using UV–vis–NIR spectrophotometry and Fourier transform infrared spectrometry. We show that the films obtained using the second type power control results in desired microstructures, leading to a total optical absorptance of 0.80.",
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}

Characteristics of sputter deposited Pt/Al2O3 thin films. / Cheng, Hsin Yen; Tzeng, Yon-Hua; Ting, Jyh-Ming.

In: Ceramics International, Vol. 42, No. 16, 01.12.2016, p. 19393-19396.

Research output: Contribution to journalArticle

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AU - Tzeng, Yon-Hua

AU - Ting, Jyh-Ming

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AB - Pt/Al2O3 thin films were prepared using a reactive co-sputtering deposition technique. Two types of power controls were used. In one type, both the DC (for the Pt target) and RF power (for the Al2O3 target) were on for the entire deposition period. In the second type, the RF power was always on while the DC power was pulsed. The resulting materials were analyzed using glazing incident X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy. The optical performance of the obtained films was examined using UV–vis–NIR spectrophotometry and Fourier transform infrared spectrometry. We show that the films obtained using the second type power control results in desired microstructures, leading to a total optical absorptance of 0.80.

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