Characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation depths

Chin Rung Yan, Jone F. Chen, Ya Jui Lee, Wei Shiang Huang, Meng Ju Huang, Chih Yuan Chen, Ying Chia Lin, Kuei Fen Chang, Huei Haurng Chen

Research output: Contribution to journalArticlepeer-review

Abstract

The program efficiency and endurance characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation (SASTI) depths are investigated. Although a large SA-STI depth improves the neighboring floating gate coupling issue and gate coupling ratio, a low program efficiency is also introduced. In addition, lower endurance characteristics are observed in the device with a large SA-STI depth than in the device with a small SA-STI depth. The mechanisms underlying such unfavorable results are discussed on the basis of experimental data and technology computer-aided design simulations.

Original languageEnglish
Article number11NA06
JournalJapanese journal of applied physics
Volume52
Issue number11 PART 2
DOIs
Publication statusPublished - 2013 Nov 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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