Characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation depths

Chin Rung Yan, Jone-Fang Chen, Ya Jui Lee, Wei Shiang Huang, Meng Ju Huang, Chih Yuan Chen, Ying Chia Lin, Kuei Fen Chang, Huei Haurng Chen

Research output: Contribution to journalArticle

Abstract

The program efficiency and endurance characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation (SASTI) depths are investigated. Although a large SA-STI depth improves the neighboring floating gate coupling issue and gate coupling ratio, a low program efficiency is also introduced. In addition, lower endurance characteristics are observed in the device with a large SA-STI depth than in the device with a small SA-STI depth. The mechanisms underlying such unfavorable results are discussed on the basis of experimental data and technology computer-aided design simulations.

Original languageEnglish
Article number11NA06
JournalJapanese Journal of Applied Physics
Volume52
Issue number11 PART 2
DOIs
Publication statusPublished - 2013 Nov 1

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flash
isolation
Durability
endurance
Computer aided design
computer aided design
floating
simulation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Yan, Chin Rung ; Chen, Jone-Fang ; Lee, Ya Jui ; Huang, Wei Shiang ; Huang, Meng Ju ; Chen, Chih Yuan ; Lin, Ying Chia ; Chang, Kuei Fen ; Chen, Huei Haurng. / Characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation depths. In: Japanese Journal of Applied Physics. 2013 ; Vol. 52, No. 11 PART 2.
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Characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation depths. / Yan, Chin Rung; Chen, Jone-Fang; Lee, Ya Jui; Huang, Wei Shiang; Huang, Meng Ju; Chen, Chih Yuan; Lin, Ying Chia; Chang, Kuei Fen; Chen, Huei Haurng.

In: Japanese Journal of Applied Physics, Vol. 52, No. 11 PART 2, 11NA06, 01.11.2013.

Research output: Contribution to journalArticle

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AU - Chen, Chih Yuan

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