Abstract
The program efficiency and endurance characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation (SASTI) depths are investigated. Although a large SA-STI depth improves the neighboring floating gate coupling issue and gate coupling ratio, a low program efficiency is also introduced. In addition, lower endurance characteristics are observed in the device with a large SA-STI depth than in the device with a small SA-STI depth. The mechanisms underlying such unfavorable results are discussed on the basis of experimental data and technology computer-aided design simulations.
Original language | English |
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Article number | 11NA06 |
Journal | Japanese journal of applied physics |
Volume | 52 |
Issue number | 11 PART 2 |
DOIs | |
Publication status | Published - 2013 Nov |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)