The program efficiency and endurance characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation (SASTI) depths are investigated. Although a large SA-STI depth improves the neighboring floating gate coupling issue and gate coupling ratio, a low program efficiency is also introduced. In addition, lower endurance characteristics are observed in the device with a large SA-STI depth than in the device with a small SA-STI depth. The mechanisms underlying such unfavorable results are discussed on the basis of experimental data and technology computer-aided design simulations.
|Journal||Japanese journal of applied physics|
|Issue number||11 PART 2|
|Publication status||Published - 2013 Nov|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)