Characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation depths

Chin Rung Yan; Jone F. Chen; Ya Jui Lee; Wei Shiang Huang; Meng Ju Huang; Chih Yuan Chen; Ying Chia Lin; Kuei Fen Chang; Huei Haurng Chen

doi:10.7567/JJAP.52.11NA06

Characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation depths

Chin Rung Yan, Jone F. Chen, Ya Jui Lee, Wei Shiang Huang, Meng Ju Huang, Chih Yuan Chen, Ying Chia Lin, Kuei Fen Chang, Huei Haurng Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

The program efficiency and endurance characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation (SASTI) depths are investigated. Although a large SA-STI depth improves the neighboring floating gate coupling issue and gate coupling ratio, a low program efficiency is also introduced. In addition, lower endurance characteristics are observed in the device with a large SA-STI depth than in the device with a small SA-STI depth. The mechanisms underlying such unfavorable results are discussed on the basis of experimental data and technology computer-aided design simulations.

Original language	English
Article number	11NA06
Journal	Japanese journal of applied physics
Volume	52
Issue number	11 PART 2
DOIs	https://doi.org/10.7567/JJAP.52.11NA06
Publication status	Published - 2013 Nov

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.7567/JJAP.52.11NA06

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title = "Characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation depths",

abstract = "The program efficiency and endurance characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation (SASTI) depths are investigated. Although a large SA-STI depth improves the neighboring floating gate coupling issue and gate coupling ratio, a low program efficiency is also introduced. In addition, lower endurance characteristics are observed in the device with a large SA-STI depth than in the device with a small SA-STI depth. The mechanisms underlying such unfavorable results are discussed on the basis of experimental data and technology computer-aided design simulations.",

author = "Yan, {Chin Rung} and Chen, {Jone F.} and Lee, {Ya Jui} and Huang, {Wei Shiang} and Huang, {Meng Ju} and Chen, {Chih Yuan} and Lin, {Ying Chia} and Chang, {Kuei Fen} and Chen, {Huei Haurng}",

year = "2013",

month = nov,

doi = "10.7567/JJAP.52.11NA06",

language = "English",

volume = "52",

journal = "Japanese Journal of Applied Physics",

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T1 - Characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation depths

AU - Yan, Chin Rung

AU - Chen, Jone F.

AU - Lee, Ya Jui

AU - Huang, Wei Shiang

AU - Huang, Meng Ju

AU - Chen, Chih Yuan

AU - Lin, Ying Chia

AU - Chang, Kuei Fen

AU - Chen, Huei Haurng

PY - 2013/11

Y1 - 2013/11

N2 - The program efficiency and endurance characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation (SASTI) depths are investigated. Although a large SA-STI depth improves the neighboring floating gate coupling issue and gate coupling ratio, a low program efficiency is also introduced. In addition, lower endurance characteristics are observed in the device with a large SA-STI depth than in the device with a small SA-STI depth. The mechanisms underlying such unfavorable results are discussed on the basis of experimental data and technology computer-aided design simulations.

AB - The program efficiency and endurance characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation (SASTI) depths are investigated. Although a large SA-STI depth improves the neighboring floating gate coupling issue and gate coupling ratio, a low program efficiency is also introduced. In addition, lower endurance characteristics are observed in the device with a large SA-STI depth than in the device with a small SA-STI depth. The mechanisms underlying such unfavorable results are discussed on the basis of experimental data and technology computer-aided design simulations.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11 PART 2

M1 - 11NA06

ER -

Characteristics of sub-50nm NAND flash devices with various self-aligned shallow trench isolation depths

Abstract

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