Characteristics of tantalum-doped silicon oxide-based resistive random access memory

Wei Kang Hsieh; Kin Tak Lam; Shoou-Jinn Chang

doi:10.1016/j.mssp.2014.06.032

Characteristics of tantalum-doped silicon oxide-based resistive random access memory

Wei Kang Hsieh, Kin Tak Lam, Shoou-Jinn Chang

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

In this study, we fabricated and analyzed resistance switching characteristics for resistive random access memory (ReRAM) cell with Ta dopant into silicon oxide layer by co-sputtering at room temperature. From the current-voltage measurements, it was found that the current conduction in high resistive state was first dominated by Ohmic conduction caused by the intrinsic carriers in the Ta:SiO_x thin film and then turned to space-charge-limited-current (SCLC) mechanism. In low resistance state (LRS), the current conduction mechanism from higher voltage to lower voltage were dominated by Fowler-Nordheim (F-N) tunneling and then SCLC mechanism, and finally dominated by Ohmic conduction mechanism. Furthermore, it was found that the Ti/Ta:SiO_x/Pt RRAM cell fabricated in this study was durable and reliable.

Original language	English
Pages (from-to)	293-296
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	27
Issue number	1
DOIs	https://doi.org/10.1016/j.mssp.2014.06.032
Publication status	Published - 2014 Jan 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Hsieh, W. K., Lam, K. T., & Chang, S-J. (2014). Characteristics of tantalum-doped silicon oxide-based resistive random access memory. Materials Science in Semiconductor Processing, 27(1), 293-296. https://doi.org/10.1016/j.mssp.2014.06.032

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abstract = "In this study, we fabricated and analyzed resistance switching characteristics for resistive random access memory (ReRAM) cell with Ta dopant into silicon oxide layer by co-sputtering at room temperature. From the current-voltage measurements, it was found that the current conduction in high resistive state was first dominated by Ohmic conduction caused by the intrinsic carriers in the Ta:SiOx thin film and then turned to space-charge-limited-current (SCLC) mechanism. In low resistance state (LRS), the current conduction mechanism from higher voltage to lower voltage were dominated by Fowler-Nordheim (F-N) tunneling and then SCLC mechanism, and finally dominated by Ohmic conduction mechanism. Furthermore, it was found that the Ti/Ta:SiOx/Pt RRAM cell fabricated in this study was durable and reliable.",

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