In this study, we fabricated and analyzed resistance switching characteristics for resistive random access memory (ReRAM) cell with Ta dopant into silicon oxide layer by co-sputtering at room temperature. From the current-voltage measurements, it was found that the current conduction in high resistive state was first dominated by Ohmic conduction caused by the intrinsic carriers in the Ta:SiOx thin film and then turned to space-charge-limited-current (SCLC) mechanism. In low resistance state (LRS), the current conduction mechanism from higher voltage to lower voltage were dominated by Fowler-Nordheim (F-N) tunneling and then SCLC mechanism, and finally dominated by Ohmic conduction mechanism. Furthermore, it was found that the Ti/Ta:SiOx/Pt RRAM cell fabricated in this study was durable and reliable.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering