Characteristics of tantalum-doped silicon oxide-based resistive random access memory

Wei Kang Hsieh; Kin Tak Lam; Shoou-Jinn Chang

doi:10.1016/j.mssp.2014.06.032

Characteristics of tantalum-doped silicon oxide-based resistive random access memory

Wei Kang Hsieh, Kin Tak Lam, Shoou-Jinn Chang

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this study, we fabricated and analyzed resistance switching characteristics for resistive random access memory (ReRAM) cell with Ta dopant into silicon oxide layer by co-sputtering at room temperature. From the current-voltage measurements, it was found that the current conduction in high resistive state was first dominated by Ohmic conduction caused by the intrinsic carriers in the Ta:SiO_x thin film and then turned to space-charge-limited-current (SCLC) mechanism. In low resistance state (LRS), the current conduction mechanism from higher voltage to lower voltage were dominated by Fowler-Nordheim (F-N) tunneling and then SCLC mechanism, and finally dominated by Ohmic conduction mechanism. Furthermore, it was found that the Ti/Ta:SiO_x/Pt RRAM cell fabricated in this study was durable and reliable.

Original language	English
Pages (from-to)	293-296
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	27
Issue number	1
DOIs	https://doi.org/10.1016/j.mssp.2014.06.032
Publication status	Published - 2014 Jan 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2014.06.032

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title = "Characteristics of tantalum-doped silicon oxide-based resistive random access memory",

abstract = "In this study, we fabricated and analyzed resistance switching characteristics for resistive random access memory (ReRAM) cell with Ta dopant into silicon oxide layer by co-sputtering at room temperature. From the current-voltage measurements, it was found that the current conduction in high resistive state was first dominated by Ohmic conduction caused by the intrinsic carriers in the Ta:SiOx thin film and then turned to space-charge-limited-current (SCLC) mechanism. In low resistance state (LRS), the current conduction mechanism from higher voltage to lower voltage were dominated by Fowler-Nordheim (F-N) tunneling and then SCLC mechanism, and finally dominated by Ohmic conduction mechanism. Furthermore, it was found that the Ti/Ta:SiOx/Pt RRAM cell fabricated in this study was durable and reliable.",

author = "Hsieh, {Wei Kang} and Lam, {Kin Tak} and Shoou-Jinn Chang",

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T1 - Characteristics of tantalum-doped silicon oxide-based resistive random access memory

AU - Hsieh, Wei Kang

AU - Lam, Kin Tak

AU - Chang, Shoou-Jinn

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this study, we fabricated and analyzed resistance switching characteristics for resistive random access memory (ReRAM) cell with Ta dopant into silicon oxide layer by co-sputtering at room temperature. From the current-voltage measurements, it was found that the current conduction in high resistive state was first dominated by Ohmic conduction caused by the intrinsic carriers in the Ta:SiOx thin film and then turned to space-charge-limited-current (SCLC) mechanism. In low resistance state (LRS), the current conduction mechanism from higher voltage to lower voltage were dominated by Fowler-Nordheim (F-N) tunneling and then SCLC mechanism, and finally dominated by Ohmic conduction mechanism. Furthermore, it was found that the Ti/Ta:SiOx/Pt RRAM cell fabricated in this study was durable and reliable.

AB - In this study, we fabricated and analyzed resistance switching characteristics for resistive random access memory (ReRAM) cell with Ta dopant into silicon oxide layer by co-sputtering at room temperature. From the current-voltage measurements, it was found that the current conduction in high resistive state was first dominated by Ohmic conduction caused by the intrinsic carriers in the Ta:SiOx thin film and then turned to space-charge-limited-current (SCLC) mechanism. In low resistance state (LRS), the current conduction mechanism from higher voltage to lower voltage were dominated by Fowler-Nordheim (F-N) tunneling and then SCLC mechanism, and finally dominated by Ohmic conduction mechanism. Furthermore, it was found that the Ti/Ta:SiOx/Pt RRAM cell fabricated in this study was durable and reliable.

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Characteristics of tantalum-doped silicon oxide-based resistive random access memory

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