Characteristics of tantalum-doped silicon oxide-based resistive random access memory

Wei Kang Hsieh, Kin Tak Lam, Shoou-Jinn Chang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this study, we fabricated and analyzed resistance switching characteristics for resistive random access memory (ReRAM) cell with Ta dopant into silicon oxide layer by co-sputtering at room temperature. From the current-voltage measurements, it was found that the current conduction in high resistive state was first dominated by Ohmic conduction caused by the intrinsic carriers in the Ta:SiOx thin film and then turned to space-charge-limited-current (SCLC) mechanism. In low resistance state (LRS), the current conduction mechanism from higher voltage to lower voltage were dominated by Fowler-Nordheim (F-N) tunneling and then SCLC mechanism, and finally dominated by Ohmic conduction mechanism. Furthermore, it was found that the Ti/Ta:SiOx/Pt RRAM cell fabricated in this study was durable and reliable.

Original languageEnglish
Pages (from-to)293-296
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume27
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Characteristics of tantalum-doped silicon oxide-based resistive random access memory'. Together they form a unique fingerprint.

  • Cite this