TY - JOUR
T1 - Characteristics of the GaAs monolayer-doped structure and its applications for power field-effect transistor fabrication
AU - Liu, Wen Chau
AU - Sun, Chung Yih
AU - Lour, Wen Shiung
N1 - Funding Information:
The authors wish to thank Miss H. R. Sze for her kindly assistance during this study. Part of this work was sponsored by National Science Council of Taiwan under Contract NSC79-0404-E006-10.
PY - 1991/2
Y1 - 1991/2
N2 - An ultimate artificial doping technique, to give a monolayer-doped (delta-doped) structure has been studied in this paper. First, two different methods, i.e., the Airy function and a modified analysis model, were used to simulate the theoretical properties of the monolayer-doped structure. By considering the free-carrier effect in each subband, the theoretical values of the modified-analysis method are consistent with the experimental results reported by other researchers. On the basis of theoretical analysis, a field effect transistor (FET) with a monolayer-doped channel has been fabricated successfully. Because of the high gate breakdown voltage and high output drain current capability, the monolayer-doped FET studied is suitable for power applications.
AB - An ultimate artificial doping technique, to give a monolayer-doped (delta-doped) structure has been studied in this paper. First, two different methods, i.e., the Airy function and a modified analysis model, were used to simulate the theoretical properties of the monolayer-doped structure. By considering the free-carrier effect in each subband, the theoretical values of the modified-analysis method are consistent with the experimental results reported by other researchers. On the basis of theoretical analysis, a field effect transistor (FET) with a monolayer-doped channel has been fabricated successfully. Because of the high gate breakdown voltage and high output drain current capability, the monolayer-doped FET studied is suitable for power applications.
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U2 - 10.1016/0921-5107(91)90004-F
DO - 10.1016/0921-5107(91)90004-F
M3 - Article
AN - SCOPUS:0026105305
SN - 0921-5107
VL - 7
SP - 275
EP - 281
JO - Materials Science and Engineering B
JF - Materials Science and Engineering B
IS - 4
ER -