Characteristics of thermally robust 5 nm Ru-C Diffusion barrier/cu seed layer in cu metallization

Chun Wei Chen, J. S. Chen, Jiann Shing Jeng

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14 Citations (Scopus)


Sputtered Ru and Ru-C films 5 nm thick are employed in the Cu/barrier/ SiO2/Si system, and their performances as the diffusion barrier as well as the seed layer for direct Cu electroplating are investigated in parallel. Based on the sheet resistance measurement and energy dispersive X-ray line profiles, the 5 nm Ru-C film can retard the diffusion of Cu after a prolonged (30 min) annealing up to 700°C, while the Ru film is an effective barrier up to only 400°C. Direct electroplating of Cu is successfully carried out on both Ru and Ru-C films, which proves that Ru-C is a Cu seed layer in addition to being a robust diffusion barrier. The microstructural characteristics of ultrathin Ru and Ru-C films are also examined, indicating that the superior barrier performance of the 5 nm Ru-C film is associated with its inferior crystallinity and resistance to agglomeration at elevated temperatures.

Original languageEnglish
Pages (from-to)H724-H728
JournalJournal of the Electrochemical Society
Issue number9
Publication statusPublished - 2009 Aug 7

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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