Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system

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Abstract

This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.

Original languageEnglish
Pages (from-to)571-574
Number of pages4
JournalMaterials Transactions
Volume53
Issue number3
DOIs
Publication statusPublished - 2012 Apr 5

Fingerprint

Thin film transistors
Sputtering
transistors
sputtering
Thin films
thin films
Chemical analysis
Electric properties
Surface roughness
chemical composition
depletion
roughness
adjusting
electrical properties
matrices

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system",
abstract = "This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.",
author = "Chen, {K. J.} and Hung, {F. Y.} and Lui, {T. S.} and Chang, {S. J.} and Liao, {T. Y.}",
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TY - JOUR

T1 - Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system

AU - Chen, K. J.

AU - Hung, F. Y.

AU - Lui, T. S.

AU - Chang, S. J.

AU - Liao, T. Y.

PY - 2012/4/5

Y1 - 2012/4/5

N2 - This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.

AB - This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.

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