Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system

K. J. Chen; F. Y. Hung; T. S. Lui; S. J. Chang; T. Y. Liao

doi:10.2320/matertrans.M2011347

Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system

K. J. Chen, F. Y. Hung, T. S. Lui, S. J. Chang, T. Y. Liao

Research output: Contribution to journal › Article › peer-review

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Abstract

This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm ²V ^-1 s ^-1, and an on/off current ratio (I _on/I _off) of 10 ⁴. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.

Original language	English
Pages (from-to)	571-574
Number of pages	4
Journal	Materials Transactions
Volume	53
Issue number	3
DOIs	https://doi.org/10.2320/matertrans.M2011347
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{2d5e091628d44b80baea5e9509b9d335,

title = "Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system",

abstract = "This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.",

author = "Chen, {K. J.} and Hung, {F. Y.} and Lui, {T. S.} and Chang, {S. J.} and Liao, {T. Y.}",

year = "2012",

doi = "10.2320/matertrans.M2011347",

language = "English",

volume = "53",

pages = "571--574",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "Japan Institute of Metals (JIM)",

number = "3",

}

TY - JOUR

T1 - Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system

AU - Chen, K. J.

AU - Hung, F. Y.

AU - Lui, T. S.

AU - Chang, S. J.

AU - Liao, T. Y.

PY - 2012

Y1 - 2012

N2 - This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.

AB - This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.

UR - http://www.scopus.com/inward/record.url?scp=84859252839&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859252839&partnerID=8YFLogxK

U2 - 10.2320/matertrans.M2011347

DO - 10.2320/matertrans.M2011347

M3 - Article

AN - SCOPUS:84859252839

SN - 1345-9678

VL - 53

SP - 571

EP - 574

JO - Materials Transactions

JF - Materials Transactions

IS - 3

ER -

Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system

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