Abstract
This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.
| Original language | English |
|---|---|
| Pages (from-to) | 571-574 |
| Number of pages | 4 |
| Journal | Materials Transactions |
| Volume | 53 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2012 Apr 5 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system. / Chen, K. J.; Hung, F. Y.; Lui, T. S.; Chang, S. J.; Liao, T. Y.
In: Materials Transactions, Vol. 53, No. 3, 05.04.2012, p. 571-574.Research output: Contribution to journal › Article
TY - JOUR
T1 - Characteristics of thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system
AU - Chen, K. J.
AU - Hung, F. Y.
AU - Lui, T. S.
AU - Chang, S. J.
AU - Liao, T. Y.
PY - 2012/4/5
Y1 - 2012/4/5
N2 - This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.
AB - This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiNx dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65V/dec, a field-effect mobility (μFE) of 2.57cm 2V -1 s -1, and an on/off current ratio (I on/I off) of 10 4. The small SS and an acceptable FE were associated with a smaller roughness and stable composition of ZITO channel layer.
UR - http://www.scopus.com/inward/record.url?scp=84859252839&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84859252839&partnerID=8YFLogxK
U2 - 10.2320/matertrans.M2011347
DO - 10.2320/matertrans.M2011347
M3 - Article
AN - SCOPUS:84859252839
VL - 53
SP - 571
EP - 574
JO - Materials Transactions
JF - Materials Transactions
SN - 0916-1821
IS - 3
ER -