Abstract
Deposition and characterization of TiNi shape memory alloy thin films were performed using a DC magnetron sputter deposition technique. As-deposited TiNi thin films were found to exhibit an amorphous structure, which crystallized upon heat treatment at 550 or 600°C. An uncommon dependence of the deposition rate on the deposition pressure was observed. Dependence of composition on the deposition pressure was also determined. The crystallization behavior of amorphous TiNi thin films was found to be different from that of bulk TiNi. The activation energies for the crystallization of the resulting TiNi thin films were calculated and found to be higher than that of bulk TiNi.
Original language | English |
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Pages (from-to) | 597-601 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 398 |
Issue number | 399 |
DOIs | |
Publication status | Published - 2001 Nov |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry