Characteristics of TiO2 metal-semiconductor-metal photodetectors with O2 plasma treatment

L. W. Ji, I. T. Tang, S. J. Young, T. H. Meen, J. K. Tsai, T. C. Wu, S. J. Chang, Y. P. Luo, K. C. Lee, J. C. Lin, B. Y. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this study, titanium dioxide (TiO2) films were prepared on Corning glass substrates by radio frequency (RF) magnetron sputtering and treated without and with O2 plasma conditions, and then were used to fabricate metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). The effects of the changes on TiO2 films were investigated by using field-emission scanning electron microscope (FE-SEM), photoluminescence (PL) system and four-point probe measurement. With a 360-nm illumination and 5 V applied bias, it was found that the responsivities of the fabricated TiO2 PDs without and with 2 minutes O2 plasma treatment were 36 and 153 A/W, respectively.

Original languageEnglish
Title of host publicationProceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
EditorsShaozi Li, Yun Cheng, Ying Dai, Xiaohong Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages63-66
Number of pages4
ISBN (Electronic)9781479931965
DOIs
Publication statusPublished - 2014 Nov 5
Event2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 - Sapporo City, Hokkaido, Japan
Duration: 2014 Apr 262014 Apr 28

Publication series

NameProceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
Volume1

Other

Other2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
CountryJapan
CitySapporo City, Hokkaido
Period14-04-2614-04-28

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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