Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method

P. Y. Yang, J. L. Wang, W. C. Tsai, Shui-Jinn Wang, P. C. Chen, N. C. Su, J. C. Lin, I. C. Lee, C. T. Chang, Y. C. Wei, H. C. Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 μm/10 μm) demonstrated the higher field-effect mobility of 6.09 cm 2 /V·s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10 6 , and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
Pages345-353
Number of pages9
Edition5
DOIs
Publication statusPublished - 2010 Dec 1
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 112010 Oct 15

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10-10-1110-10-15

Fingerprint

Thin film transistors
Zinc oxide
Oxide films
Grain growth
Grain boundaries
Thin films
Threshold voltage
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Yang, P. Y., Wang, J. L., Tsai, W. C., Wang, S-J., Chen, P. C., Su, N. C., ... Cheng, H. C. (2010). Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method. In Thin Film Transistors 10, TFT 10 (5 ed., pp. 345-353). (ECS Transactions; Vol. 33, No. 5). https://doi.org/10.1149/1.3481257
Yang, P. Y. ; Wang, J. L. ; Tsai, W. C. ; Wang, Shui-Jinn ; Chen, P. C. ; Su, N. C. ; Lin, J. C. ; Lee, I. C. ; Chang, C. T. ; Wei, Y. C. ; Cheng, H. C. / Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method. Thin Film Transistors 10, TFT 10. 5. ed. 2010. pp. 345-353 (ECS Transactions; 5).
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title = "Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method",
abstract = "In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 μm/10 μm) demonstrated the higher field-effect mobility of 6.09 cm 2 /V·s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10 6 , and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.",
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Yang, PY, Wang, JL, Tsai, WC, Wang, S-J, Chen, PC, Su, NC, Lin, JC, Lee, IC, Chang, CT, Wei, YC & Cheng, HC 2010, Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method. in Thin Film Transistors 10, TFT 10. 5 edn, ECS Transactions, no. 5, vol. 33, pp. 345-353, 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting, Las Vegas, NV, United States, 10-10-11. https://doi.org/10.1149/1.3481257

Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method. / Yang, P. Y.; Wang, J. L.; Tsai, W. C.; Wang, Shui-Jinn; Chen, P. C.; Su, N. C.; Lin, J. C.; Lee, I. C.; Chang, C. T.; Wei, Y. C.; Cheng, H. C.

Thin Film Transistors 10, TFT 10. 5. ed. 2010. p. 345-353 (ECS Transactions; Vol. 33, No. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Su, N. C.

AU - Lin, J. C.

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N2 - In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 μm/10 μm) demonstrated the higher field-effect mobility of 6.09 cm 2 /V·s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10 6 , and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.

AB - In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 μm/10 μm) demonstrated the higher field-effect mobility of 6.09 cm 2 /V·s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10 6 , and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.

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Yang PY, Wang JL, Tsai WC, Wang S-J, Chen PC, Su NC et al. Characteristics of zinc oxide thin film transistors fabricated by location-controlled hydrothermal method. In Thin Film Transistors 10, TFT 10. 5 ed. 2010. p. 345-353. (ECS Transactions; 5). https://doi.org/10.1149/1.3481257