Highly oriented wurtzite (Sc, Al)N films were deposited on a diamond/silicon by a co-sputtering system. The results showed that the formation of ScxAl1-xN alloys causes a lattice distortion during the phase transition, and this intermediate phase induces a large piezoelectric response. When the scandium concentration increased up to the solution limit of scandium in aluminum nitride (measured data are about 12 at.%), the piezoelectric coefficient of (Sc, Al)N film is four times larger than pure AlN layer. After annealing process, the d33 value of (Sc, Al)N can be increased to a maximum of 20.073 pC/N.
|Number of pages||7|
|Journal||International Journal of Applied Ceramic Technology|
|Publication status||Published - 2014 Jan 1|
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry