Characterization and piezoelectric properties of reactively sputtered (Sc, Al)N thin films on diamond structure

Sean Wu, Meng Ying Wu, Jow-Lay Huang, Ding Fwu Lii

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Highly oriented wurtzite (Sc, Al)N films were deposited on a diamond/silicon by a co-sputtering system. The results showed that the formation of ScxAl1-xN alloys causes a lattice distortion during the phase transition, and this intermediate phase induces a large piezoelectric response. When the scandium concentration increased up to the solution limit of scandium in aluminum nitride (measured data are about 12 at.%), the piezoelectric coefficient of (Sc, Al)N film is four times larger than pure AlN layer. After annealing process, the d33 value of (Sc, Al)N can be increased to a maximum of 20.073 pC/N.

Original languageEnglish
Pages (from-to)894-900
Number of pages7
JournalInternational Journal of Applied Ceramic Technology
Volume11
Issue number5
DOIs
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Marketing
  • Materials Chemistry

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