Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application

Y. L. Cheng, Y. L. Wang, C. W. Liu, Y. L. Wu, Kuang-Yao Lo, Chuan-Pu Liu, J. K. Lan

Research output: Contribution to journalArticle

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Abstract

Fluorosilicate Glass (FSG) with low dielectric constant currently has been replaced as an alternative to SiO2 for device speed improvement. However, several integration aspects, such as Fluorine (F) distribution, F thermal stability, gap fill capability, capacitance reduction and via resistance of FSG prepared by the high density plasma (HDP) chemical vapor deposition (CVD) method are of concern for sub-0.18-μm devices. In this study, HDP-FSG films show different F concentrations at different locations on an 8-inch wafer. In addition, the FSG film shows poor thermal stability and F diffuses out of the film after high temperature annealing and the pressure cook test (PCT). However, the thermal stability of FSG film can be improved by capping with an oxide layer. The results indicate that silicon rich oxide (SRO) has a better effect at blocking the F diffusion out of FSG films at high temperature than plasma enhanced oxide (PE-OX). For the gap fill capability, HDP-FSG can fill all 0.23-μm gaps and some of the 0.21-μm gaps with an aspect ratio <3.8 but not the 0.19-μm gaps. A 8000 Å HDP-FSG film with 600 Å USG liner and 2000 Å cap layer shows approximately 7.5 to 7.7% capacitance reduction on 0.23/0.23-μm gaps when compared with USG (undoped silicate glass). In addition, FSG has a larger capacitance reduction on the wider metal lines than the thinner metal lines at the same gap size due to a capacitance fringe effect. The via resistance for 0.26 μm unlanded via (which allow minor photo mis-alignment) of HDP-FSG film is also similar to that of USG.

Original languageEnglish
Pages (from-to)533-538
Number of pages6
JournalThin Solid Films
Volume398
Issue number399
DOIs
Publication statusPublished - 2001 Jan 1

Fingerprint

fluorosilicates
Silicon
silicon oxides
Oxides
Permittivity
permittivity
Glass
glass
Plasma density
plasma density
Silicates
Capacitance
capacitance
silicates
Thermodynamic stability
thermal stability
Metals
oxides
Fluorine
high temperature plasmas

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application",
abstract = "Fluorosilicate Glass (FSG) with low dielectric constant currently has been replaced as an alternative to SiO2 for device speed improvement. However, several integration aspects, such as Fluorine (F) distribution, F thermal stability, gap fill capability, capacitance reduction and via resistance of FSG prepared by the high density plasma (HDP) chemical vapor deposition (CVD) method are of concern for sub-0.18-μm devices. In this study, HDP-FSG films show different F concentrations at different locations on an 8-inch wafer. In addition, the FSG film shows poor thermal stability and F diffuses out of the film after high temperature annealing and the pressure cook test (PCT). However, the thermal stability of FSG film can be improved by capping with an oxide layer. The results indicate that silicon rich oxide (SRO) has a better effect at blocking the F diffusion out of FSG films at high temperature than plasma enhanced oxide (PE-OX). For the gap fill capability, HDP-FSG can fill all 0.23-μm gaps and some of the 0.21-μm gaps with an aspect ratio <3.8 but not the 0.19-μm gaps. A 8000 {\AA} HDP-FSG film with 600 {\AA} USG liner and 2000 {\AA} cap layer shows approximately 7.5 to 7.7{\%} capacitance reduction on 0.23/0.23-μm gaps when compared with USG (undoped silicate glass). In addition, FSG has a larger capacitance reduction on the wider metal lines than the thinner metal lines at the same gap size due to a capacitance fringe effect. The via resistance for 0.26 μm unlanded via (which allow minor photo mis-alignment) of HDP-FSG film is also similar to that of USG.",
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Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application. / Cheng, Y. L.; Wang, Y. L.; Liu, C. W.; Wu, Y. L.; Lo, Kuang-Yao; Liu, Chuan-Pu; Lan, J. K.

In: Thin Solid Films, Vol. 398, No. 399, 01.01.2001, p. 533-538.

Research output: Contribution to journalArticle

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T1 - Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application

AU - Cheng, Y. L.

AU - Wang, Y. L.

AU - Liu, C. W.

AU - Wu, Y. L.

AU - Lo, Kuang-Yao

AU - Liu, Chuan-Pu

AU - Lan, J. K.

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AB - Fluorosilicate Glass (FSG) with low dielectric constant currently has been replaced as an alternative to SiO2 for device speed improvement. However, several integration aspects, such as Fluorine (F) distribution, F thermal stability, gap fill capability, capacitance reduction and via resistance of FSG prepared by the high density plasma (HDP) chemical vapor deposition (CVD) method are of concern for sub-0.18-μm devices. In this study, HDP-FSG films show different F concentrations at different locations on an 8-inch wafer. In addition, the FSG film shows poor thermal stability and F diffuses out of the film after high temperature annealing and the pressure cook test (PCT). However, the thermal stability of FSG film can be improved by capping with an oxide layer. The results indicate that silicon rich oxide (SRO) has a better effect at blocking the F diffusion out of FSG films at high temperature than plasma enhanced oxide (PE-OX). For the gap fill capability, HDP-FSG can fill all 0.23-μm gaps and some of the 0.21-μm gaps with an aspect ratio <3.8 but not the 0.19-μm gaps. A 8000 Å HDP-FSG film with 600 Å USG liner and 2000 Å cap layer shows approximately 7.5 to 7.7% capacitance reduction on 0.23/0.23-μm gaps when compared with USG (undoped silicate glass). In addition, FSG has a larger capacitance reduction on the wider metal lines than the thinner metal lines at the same gap size due to a capacitance fringe effect. The via resistance for 0.26 μm unlanded via (which allow minor photo mis-alignment) of HDP-FSG film is also similar to that of USG.

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