Characterization of 19.9%-efficient CIGS absorbers

Ingrid Repins, Miguel Contreras, Manuel Romero, Yanfa Yan, Wyatt Metzger, Jian Li, Steve Johnston, Brian Egaas, Clay Dehart, John Scharf, Brian E. McCandless, Rommel Noufi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

66 Citations (Scopus)


We recently reported a new record total-area efficiency, 19.9%, for CuInGaSe2 (CIGS)-based thin-film solar cells [1]. Current-voltage analysis indicates that improved performance in the record device is due to reduced recombination. The reduced recombination was achieved by terminating the processing with a Ga-poor (In-rich) layer, which has led to a number of devices exceeding the prior (19.5%) efficiency record. This paper documents the properties of the high-efficiency CIGS by a variety of characterization techniques, with an emphasis on identifying near-surface properties associated with the modified processing.

Original languageEnglish
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Publication statusPublished - 2008
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: 2008 May 112008 May 16

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Country/TerritoryUnited States
CitySan Diego, CA

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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