Characterization of a GaAs current-controlled bipolar-unipolar transition negative differential resistance transistor

K. F. Yarn, Yeong-Her Wang, C. Y. Chang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

GaAs current-controlled bipolar-unipolar transition negative differential resistance (NDR) transistors using an n+-i-p+-i-n + homojunction structure prepared by molecular beam epitaxy are demonstrated. For a base thickness of 200 Å and using a highly doped sheet concentration of 1013 cm-2, a NDR region is revealed for IB<100 μA. The peak-to-valley current ratios are about 8 at room temperature. This is proposed to be due to the bipolar-unipolar transition reaction. When IB>=100 μA, the proposed device operates as a conventional bipolar transistor. Additionally, the effects of base thickness on current-voltage characteristics are also investigated.

Original languageEnglish
Pages (from-to)777-779
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number8
DOIs
Publication statusPublished - 1990 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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