Characterization of air-exposure/activation cycles of porous Ti-Zr-V getter film using synchrotron radiation photoemission spectroscopy

Chien Cheng Li; Jow Lay Huang; Ran Jin Lin; Ding Fwu Lii; Chia Hao Chen; Li Chyong Chen; Kuei Hsien Chen

doi:10.1016/j.tsf.2009.01.087

Characterization of air-exposure/activation cycles of porous Ti-Zr-V getter film using synchrotron radiation photoemission spectroscopy

Chien Cheng Li, Jow Lay Huang, Ran Jin Lin, Ding Fwu Lii, Chia Hao Chen, Li Chyong Chen, Kuei Hsien Chen

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Highly porous TiZrV films on (100) Si wafers were used to study the oxidation state of a film surface after three gas-adsorption/activation cycles using synchrotron radiation photoemission spectroscopy (SRPES). The oxidation state and composition of porous TiZrV film are highly affected by the present conditions of air-exposure/activation cycles. In the porous TiZrV films after activation treatment, the C content on the surface of the films gradually increased with increasing air-exposure/activation cycles. In the porous TiZrV film after air-exposure treatment, the O content on the surface of the films decreased with increasing of air-exposure/activation cycles. The concentration of Zr on the film surface increased with increasing of air-exposure/activation cycles. These results are caused by the formation of metal carbides on the film surface.

Original language	English
Pages (from-to)	3672-3676
Number of pages	5
Journal	Thin Solid Films
Volume	517
Issue number	13
DOIs	https://doi.org/10.1016/j.tsf.2009.01.087
Publication status	Published - 2009 May 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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@article{54f3e02a54874a00b908933866a996f3,

title = "Characterization of air-exposure/activation cycles of porous Ti-Zr-V getter film using synchrotron radiation photoemission spectroscopy",

abstract = "Highly porous TiZrV films on (100) Si wafers were used to study the oxidation state of a film surface after three gas-adsorption/activation cycles using synchrotron radiation photoemission spectroscopy (SRPES). The oxidation state and composition of porous TiZrV film are highly affected by the present conditions of air-exposure/activation cycles. In the porous TiZrV films after activation treatment, the C content on the surface of the films gradually increased with increasing air-exposure/activation cycles. In the porous TiZrV film after air-exposure treatment, the O content on the surface of the films decreased with increasing of air-exposure/activation cycles. The concentration of Zr on the film surface increased with increasing of air-exposure/activation cycles. These results are caused by the formation of metal carbides on the film surface.",

author = "Li, {Chien Cheng} and Huang, {Jow Lay} and Lin, {Ran Jin} and Lii, {Ding Fwu} and Chen, {Chia Hao} and Chen, {Li Chyong} and Chen, {Kuei Hsien}",

year = "2009",

month = may,

day = "1",

doi = "10.1016/j.tsf.2009.01.087",

language = "English",

volume = "517",

pages = "3672--3676",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "13",

}

Characterization of air-exposure/activation cycles of porous Ti-Zr-V getter film using synchrotron radiation photoemission spectroscopy. / Li, Chien Cheng; Huang, Jow Lay; Lin, Ran Jin; Lii, Ding Fwu; Chen, Chia Hao; Chen, Li Chyong; Chen, Kuei Hsien.

In: Thin Solid Films, Vol. 517, No. 13, 01.05.2009, p. 3672-3676.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characterization of air-exposure/activation cycles of porous Ti-Zr-V getter film using synchrotron radiation photoemission spectroscopy

AU - Li, Chien Cheng

AU - Huang, Jow Lay

AU - Lin, Ran Jin

AU - Lii, Ding Fwu

AU - Chen, Chia Hao

AU - Chen, Li Chyong

AU - Chen, Kuei Hsien

PY - 2009/5/1

Y1 - 2009/5/1

N2 - Highly porous TiZrV films on (100) Si wafers were used to study the oxidation state of a film surface after three gas-adsorption/activation cycles using synchrotron radiation photoemission spectroscopy (SRPES). The oxidation state and composition of porous TiZrV film are highly affected by the present conditions of air-exposure/activation cycles. In the porous TiZrV films after activation treatment, the C content on the surface of the films gradually increased with increasing air-exposure/activation cycles. In the porous TiZrV film after air-exposure treatment, the O content on the surface of the films decreased with increasing of air-exposure/activation cycles. The concentration of Zr on the film surface increased with increasing of air-exposure/activation cycles. These results are caused by the formation of metal carbides on the film surface.

AB - Highly porous TiZrV films on (100) Si wafers were used to study the oxidation state of a film surface after three gas-adsorption/activation cycles using synchrotron radiation photoemission spectroscopy (SRPES). The oxidation state and composition of porous TiZrV film are highly affected by the present conditions of air-exposure/activation cycles. In the porous TiZrV films after activation treatment, the C content on the surface of the films gradually increased with increasing air-exposure/activation cycles. In the porous TiZrV film after air-exposure treatment, the O content on the surface of the films decreased with increasing of air-exposure/activation cycles. The concentration of Zr on the film surface increased with increasing of air-exposure/activation cycles. These results are caused by the formation of metal carbides on the film surface.

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