Characterization of Ba(Mg1/3Ta2/3)O3) and Bi2(Zn1/3Nb2/3)2O7 microwave dielectrics in optical and microwave frequency regions

Hsiu Fung Cheng, Yi-Chun Chen, Ying Hao Zhu, I. Nian Lin

Research output: Contribution to conferencePaper

Abstract

Ba(Mg1/3Ta2/3)O3, BMT, and Bi2(Zn1/3Nb2/3)2O7, BiZN, thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were measured using optical transmission spectroscopy. Characteristics of BMT thin films were compared with those of BiZN thin films. BMT films need higher substrate temperature (800?) and longer deposition time (75 min) than those of BiZN thin films for getting better crystallinity. The index of refraction n and the absorption coefficient k of these films derived from their optical transmission spectra reveal that both optical parameters (n, k) for the BMT films are smaller than those of BiZN films. These behaviors are intimately correlated with lower microwave dielectric constant K and higher quality factor Q×f characteristics for BMT bulk materials, as compared with those of BiZN bulk materials.

Original languageEnglish
Number of pages1
Publication statusPublished - 2000 Dec 1
Event12 Asia-Pacific Microwave Conference - Sydney, Australia
Duration: 2000 Dec 32000 Dec 6

Other

Other12 Asia-Pacific Microwave Conference
CitySydney, Australia
Period00-12-0300-12-06

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Microwave frequencies
Microwaves
Thin films
Light transmission
Substrates
Pulsed laser deposition
Refraction
Dielectric properties
Permittivity
Single crystals
Spectroscopy
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Cheng, H. F., Chen, Y-C., Zhu, Y. H., & Lin, I. N. (2000). Characterization of Ba(Mg1/3Ta2/3)O3) and Bi2(Zn1/3Nb2/3)2O7 microwave dielectrics in optical and microwave frequency regions. Paper presented at 12 Asia-Pacific Microwave Conference, Sydney, Australia, .
Cheng, Hsiu Fung ; Chen, Yi-Chun ; Zhu, Ying Hao ; Lin, I. Nian. / Characterization of Ba(Mg1/3Ta2/3)O3) and Bi2(Zn1/3Nb2/3)2O7 microwave dielectrics in optical and microwave frequency regions. Paper presented at 12 Asia-Pacific Microwave Conference, Sydney, Australia, .1 p.
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abstract = "Ba(Mg1/3Ta2/3)O3, BMT, and Bi2(Zn1/3Nb2/3)2O7, BiZN, thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were measured using optical transmission spectroscopy. Characteristics of BMT thin films were compared with those of BiZN thin films. BMT films need higher substrate temperature (800?) and longer deposition time (75 min) than those of BiZN thin films for getting better crystallinity. The index of refraction n and the absorption coefficient k of these films derived from their optical transmission spectra reveal that both optical parameters (n, k) for the BMT films are smaller than those of BiZN films. These behaviors are intimately correlated with lower microwave dielectric constant K and higher quality factor Q×f characteristics for BMT bulk materials, as compared with those of BiZN bulk materials.",
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Cheng, HF, Chen, Y-C, Zhu, YH & Lin, IN 2000, 'Characterization of Ba(Mg1/3Ta2/3)O3) and Bi2(Zn1/3Nb2/3)2O7 microwave dielectrics in optical and microwave frequency regions' Paper presented at 12 Asia-Pacific Microwave Conference, Sydney, Australia, 00-12-03 - 00-12-06, .

Characterization of Ba(Mg1/3Ta2/3)O3) and Bi2(Zn1/3Nb2/3)2O7 microwave dielectrics in optical and microwave frequency regions. / Cheng, Hsiu Fung; Chen, Yi-Chun; Zhu, Ying Hao; Lin, I. Nian.

2000. Paper presented at 12 Asia-Pacific Microwave Conference, Sydney, Australia, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Characterization of Ba(Mg1/3Ta2/3)O3) and Bi2(Zn1/3Nb2/3)2O7 microwave dielectrics in optical and microwave frequency regions

AU - Cheng, Hsiu Fung

AU - Chen, Yi-Chun

AU - Zhu, Ying Hao

AU - Lin, I. Nian

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Ba(Mg1/3Ta2/3)O3, BMT, and Bi2(Zn1/3Nb2/3)2O7, BiZN, thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were measured using optical transmission spectroscopy. Characteristics of BMT thin films were compared with those of BiZN thin films. BMT films need higher substrate temperature (800?) and longer deposition time (75 min) than those of BiZN thin films for getting better crystallinity. The index of refraction n and the absorption coefficient k of these films derived from their optical transmission spectra reveal that both optical parameters (n, k) for the BMT films are smaller than those of BiZN films. These behaviors are intimately correlated with lower microwave dielectric constant K and higher quality factor Q×f characteristics for BMT bulk materials, as compared with those of BiZN bulk materials.

AB - Ba(Mg1/3Ta2/3)O3, BMT, and Bi2(Zn1/3Nb2/3)2O7, BiZN, thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were measured using optical transmission spectroscopy. Characteristics of BMT thin films were compared with those of BiZN thin films. BMT films need higher substrate temperature (800?) and longer deposition time (75 min) than those of BiZN thin films for getting better crystallinity. The index of refraction n and the absorption coefficient k of these films derived from their optical transmission spectra reveal that both optical parameters (n, k) for the BMT films are smaller than those of BiZN films. These behaviors are intimately correlated with lower microwave dielectric constant K and higher quality factor Q×f characteristics for BMT bulk materials, as compared with those of BiZN bulk materials.

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M3 - Paper

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Cheng HF, Chen Y-C, Zhu YH, Lin IN. Characterization of Ba(Mg1/3Ta2/3)O3) and Bi2(Zn1/3Nb2/3)2O7 microwave dielectrics in optical and microwave frequency regions. 2000. Paper presented at 12 Asia-Pacific Microwave Conference, Sydney, Australia, .