Abstract
This work reports the study of the deep level defects in the Si MBE and SPE films using deep level transient spectroscopy. The films are grown in a Si MBE system with a base pressure of 10** minus **1**0 torr. Three different chemical cleaning procedures are used to clean the Si substrates prior to growth. As the result of cleaning, different silicon oxide protection layers are obtained.
Original language | English |
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Pages (from-to) | 173 |
Number of pages | 1 |
Journal | Electrochemical Society Extended Abstracts |
Volume | 85-1 |
Publication status | Published - 1985 |
All Science Journal Classification (ASJC) codes
- Engineering(all)