This work reports the study of the deep level defects in the Si MBE and SPE films using deep level transient spectroscopy. The films are grown in a Si MBE system with a base pressure of 10** minus **1**0 torr. Three different chemical cleaning procedures are used to clean the Si substrates prior to growth. As the result of cleaning, different silicon oxide protection layers are obtained.
|Number of pages||1|
|Journal||Electrochemical Society Extended Abstracts|
|Publication status||Published - 1985|
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