CHARACTERIZATION OF DEEP LEVEL DEFECTS IN SILICON FILMS GROWN BY MOLECULAR BEAM EPITAXY (MBE) AND SOLID PHASE EPITAXY (SPE).

Y. H. Xie; Y. Y. Wu; K. L. Wang

CHARACTERIZATION OF DEEP LEVEL DEFECTS IN SILICON FILMS GROWN BY MOLECULAR BEAM EPITAXY (MBE) AND SOLID PHASE EPITAXY (SPE).

Y. H. Xie, Y. Y. Wu, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

Abstract

This work reports the study of the deep level defects in the Si MBE and SPE films using deep level transient spectroscopy. The films are grown in a Si MBE system with a base pressure of 10** minus **1**0 torr. Three different chemical cleaning procedures are used to clean the Si substrates prior to growth. As the result of cleaning, different silicon oxide protection layers are obtained.

Original language	English
Pages (from-to)	173
Number of pages	1
Journal	Electrochemical Society Extended Abstracts
Volume	85-1
Publication status	Published - 1985

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

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title = "CHARACTERIZATION OF DEEP LEVEL DEFECTS IN SILICON FILMS GROWN BY MOLECULAR BEAM EPITAXY (MBE) AND SOLID PHASE EPITAXY (SPE).",

abstract = "This work reports the study of the deep level defects in the Si MBE and SPE films using deep level transient spectroscopy. The films are grown in a Si MBE system with a base pressure of 10** minus **1**0 torr. Three different chemical cleaning procedures are used to clean the Si substrates prior to growth. As the result of cleaning, different silicon oxide protection layers are obtained.",

author = "Xie, {Y. H.} and Wu, {Y. Y.} and Wang, {K. L.}",

year = "1985",

language = "English",

volume = "85-1",

pages = "173",

journal = "Electrochemical Society Extended Abstracts",

issn = "0160-4619",

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T1 - CHARACTERIZATION OF DEEP LEVEL DEFECTS IN SILICON FILMS GROWN BY MOLECULAR BEAM EPITAXY (MBE) AND SOLID PHASE EPITAXY (SPE).

AU - Xie, Y. H.

AU - Wu, Y. Y.

AU - Wang, K. L.

PY - 1985

Y1 - 1985

N2 - This work reports the study of the deep level defects in the Si MBE and SPE films using deep level transient spectroscopy. The films are grown in a Si MBE system with a base pressure of 10** minus **1**0 torr. Three different chemical cleaning procedures are used to clean the Si substrates prior to growth. As the result of cleaning, different silicon oxide protection layers are obtained.

AB - This work reports the study of the deep level defects in the Si MBE and SPE films using deep level transient spectroscopy. The films are grown in a Si MBE system with a base pressure of 10** minus **1**0 torr. Three different chemical cleaning procedures are used to clean the Si substrates prior to growth. As the result of cleaning, different silicon oxide protection layers are obtained.

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UR - http://www.scopus.com/inward/citedby.url?scp=0021873688&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0021873688

VL - 85-1

SP - 173

JO - Electrochemical Society Extended Abstracts

JF - Electrochemical Society Extended Abstracts

SN - 0160-4619

ER -

CHARACTERIZATION OF DEEP LEVEL DEFECTS IN SILICON FILMS GROWN BY MOLECULAR BEAM EPITAXY (MBE) AND SOLID PHASE EPITAXY (SPE).

Abstract

All Science Journal Classification (ASJC) codes

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